MOROCCO B 108 B Search Results

MOROCCO B 108 B

Contextual Info: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION

choke vk200

Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
Contextual Info: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM

M252

Abstract: SD56150
Contextual Info: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed

LET8180

Abstract: M252
Contextual Info: LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252

ESM6045AV

Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

ESM6045AV

Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:

Contextual Info: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE

diode BZW50-56

Abstract: BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
Contextual Info: BZW50-10,B/180,B  TRANSILTM FEATURES PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGERANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection

diode BZW50-56

Abstract: DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
Contextual Info: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION R6 Transil diodes provide high overvoltage protection

STF6045AV

Abstract: RC VOLTAGE CLAMP snubber circuit
Contextual Info: STF6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1

F126

Abstract: TP30-100 TP30-120 TP30-130 TP30-180 TP30-200 TP30-220 TP30-62 TP30-68 BELLCORETR-NWT-000974
Contextual Info: TP30-xxx Series TRISILTM PRELIMINARY DATASHEET FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE F126 DESCRIPTION

TSH151

Abstract: TSH151C TSH151I
Contextual Info: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH151 is a wideband monolithic operational

H150

Abstract: TSH150 TSH150C TSH150I TSH150M
Contextual Info: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational

BZW50-100B

Contextual Info: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection

TSH150

Abstract: TSH150I
Contextual Info: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% DESCRIPTION The TSH150 is a wideband monolithic operational

TSH1511

Abstract: TSH151 TSH151I
Contextual Info: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION The TSH151 is a wideband monolithic operational

Contextual Info: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER . LOW DISTORTION . GAIN BANDWIDTH PRODUCT : 150MHz . UNITY GAIN STABLE . SLEW RATE : 190V/|is . VERY FAST SETTLING TIME :20ns 0.1% N DIP8 D S08 (Plastic Package) (Plastic Micropackage)

Contextual Info: * 7£ SGS-THOMSON KÜD g[B g[Li(gïïœia©i T S H 15 0 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V^is VERY FAST SETTLING TIME : 20ns (0.1% DESCRIPTION:

marking code w17

Abstract: marking W17 Marking W35 marking W07 W39 marking SMTPB120 SMTPB130 SMTPB180 SMTPB200 SMTPB220
Contextual Info: SMTPB SERIES TRISIL . . FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min PEAK PULSE CURRENT : IPP = 90 A, 10/1000 µs. SOD 15 DESCRIPTION Plastic The SMTPBxx series has been designed to

50-150B

Contextual Info: S G S - Ï H O M S O N m œ m ie r a M o s s B Z W 5 0 - 10 , B/18 0 , B TRANSIL FEATURES • PEAK PULSE POWER : 5000 W 10/1 OOO^s ■ STAND-OFF VOLTAGE RANGE: From 10V to 180 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME

NPN DARLINGTON POWER module isotop

Abstract: isotop bipolar CIRCUIT DIAGRAM UPS schematic diagram UPS smps 450 W SMPS IC 2003 UPS circuit diagram ESM6045AV
Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE • ■ ■ ■ ■ ■ INDUSTRIAL APPLICATIONS:

smb marking U01

Abstract: SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA62 SMTPA68 VDE0433
Contextual Info: SMTPA SERIES TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 50 A, 10/1000 µs. SMB JEDEC DO-214AA DESCRIPTION The SMTPAxx series has been designedto protect

CB429

Abstract: TPB100 TPB120 TPB130 TPB62 TPB68 VDE0433 VDE0878 TRISIL
Contextual Info: TPB SERIES  TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. UL RECOGNIZED FILE # E136224 DESCRIPTION CB429 The TPB series are TRISIL devices especially designed for protecting sensitive telecommunication