Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOROCCO B 108 B Search Results

    MOROCCO B 108 B Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    10078995-G01-08BLF
    Amphenol Communications Solutions MINITEK SHROUDED HEADER--EJECT LATCH PDF
    71600-108BLF
    Amphenol Communications Solutions Quickie IDC Receptacle, Wire to Board connector -Double row - 8 Positions - 2.54 mm (0.1 in.) - Black color PDF
    PUCC57108BQDRQ1
    Texas Instruments Low-Side Driver with DESAT and 8V UVLO 8-SOIC -40 to 125 Visit Texas Instruments

    MOROCCO B 108 B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: fZ ^ 7 • . ■ . ■ . 7 S G S -T H O M S O N SD1457 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION p OUT = 75 W MIN. WITH 10.0 dB GAIN PIN CONNECTION DESCRIPTION


    OCR Scan
    SD1457 SD1457 PDF

    MOROCCO B 108 B

    Contextual Info: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION


    OCR Scan
    SD1460 SD1143 MOROCCO B 108 B PDF

    choke vk200

    Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
    Contextual Info: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original
    SD1460 SD1460 choke vk200 VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics PDF

    vk200 rfc with 6 turns

    Abstract: vk200 choke SD1460 vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098
    Contextual Info: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original
    SD1460 SD1460 vk200 rfc with 6 turns vk200 choke vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098 PDF

    Contextual Info: f Z 7 SGS-THOMSON ^ 7 #. • . ■ . ■ . SD1460 K M « « ® « ! RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 dB GAIN PIN CONNECTION V 1 \ of jo


    OCR Scan
    SD1460 SD1143 PDF

    ARCO 100PF

    Abstract: SD1457
    Contextual Info: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF


    Original
    SD1457 SD1457 ARCO 100PF PDF

    capacitor 100uF 63V

    Contextual Info: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF


    Original
    SD1457 SD1457 capacitor 100uF 63V PDF

    sd1483

    Abstract: GP LL3
    Contextual Info: SGS-THOMSON ^ 7 # . » » I l L ll g r a W D SD1483 g i RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS > 88 - 108 MHz . 28 VOLTS . EFFICIENCY 60% . COMMON EMITTER . GOLD METALLIZATION > P o u t = 300 W MIN. WITH 10 dB GAIN PIN CONNECTION 1 1 2 DESCRIPTION


    OCR Scan
    SD1483 SD1483 GP LL3 PDF

    BUZ11A

    Contextual Info: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan
    BUZ11A BUZ11A PDF

    Contextual Info: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    SD56150 SD56150 PDF

    M252

    Abstract: SD56150
    Contextual Info: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    SD56150 SD56150 M252 PDF

    LET8180

    Abstract: M252
    Contextual Info: LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252


    Original
    LET8180 LET8180 M252 PDF

    TPA160

    Abstract: TPA120 TPA130A TPA100B
    Contextual Info: rZ J SG S-THOM SO N TPA SERIES TRISIL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION . BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. ■ HOLDING CURRENT = lH Suffix 1 2 = 1 20mA min. Suffix 1 8 = 1 80mA min. . PEAK PULSE CURRENT: |PP = 50 A, 10/1000 |is. DESCRIPTION


    OCR Scan
    PDF

    ESM6045AV

    Abstract: 62us
    Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original
    ESM6045AV ESM6045AV 62us PDF

    ESM6045AV

    Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original
    ESM6045AV ESM6045AV PDF

    ESM6045AV

    Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original
    ESM6045AV ESM6045AV PDF

    Contextual Info: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE


    OCR Scan
    TSH151 150MHz 200V4is TheTSH151 TSH151 00bE4E5 PDF

    diode BZW50-56

    Abstract: BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
    Contextual Info: BZW50-10,B/180,B  TRANSILTM FEATURES PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGERANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection


    Original
    BZW50-10 B/180 diode BZW50-56 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47 PDF

    diode BZW50-56

    Abstract: diode BZW50-180 BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39
    Contextual Info: BZW50-10,B/180,B  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection


    Original
    BZW50-10 B/180 diode BZW50-56 diode BZW50-180 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 PDF

    diode BZW50-56

    Abstract: DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
    Contextual Info: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION R6 Transil diodes provide high overvoltage protection


    Original
    BZW50-10 B/180 diode BZW50-56 DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47 PDF

    STF6045AV

    Abstract: RC VOLTAGE CLAMP snubber circuit
    Contextual Info: STF6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original
    STF6045AV STF6045AV RC VOLTAGE CLAMP snubber circuit PDF

    Contextual Info: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1


    OCR Scan
    STTB12006TV1 STTB12006TV2 G73b53 PDF

    H150

    Abstract: TSH150 TSH150C TSH150I
    Contextual Info: TSH150  WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational


    Original
    TSH150 150MHz TSH150 MILSTD883CClass2. H150 TSH150C TSH150I PDF

    TSH150

    Abstract: TSH150I
    Contextual Info: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% DESCRIPTION D SO8 (Plastic Micropackage) The TSH150 is a wideband monolithic operational


    Original
    TSH150 150MHz TSH150 MILSTD883C-Classent TSH150I PDF