MOROCCO 30 Search Results

transistor D 4515

Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Contextual Info: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722

Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω

AP4570

Abstract: GS30T48-5
Contextual Info: GS30T48-5 30 W DC-DC CONVERTER Type GS30T48-5 Vin Vout Iout 36 to 72 V 5V 6A DESCRIPTION The GS30T48-5 is a 30W DC-DC converter designed to provide a 5V/6A isolated power source. The module features a wide input voltage range 36 to 72V , low reflected input currend and short-circuit

SD1411

Contextual Info: SD1411 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 40 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 200 W MIN. WITH 16 dB GAIN .400 x .425 6LFL M153 epoxy sealed ORDER CODE SD1411 BRANDING SD1411 PIN CONNECTION DESCRIPTION

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027

80196

Abstract: MSC80196
Contextual Info: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011

M135

Abstract: SD1274 SD1274 transistor
Contextual Info: SD1274 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN .380 4L STUD M135 epoxy sealed ORDER CODE SD1274 BRANDING SD1274 PIN CONNECTION DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon

AM80610-030

Abstract: S042
Contextual Info: AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL S042 hermetically sealed

Contextual Info: SGS-THOMSON SD1411 L Ig T M M RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . 30 MHz 40 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION • P o u t = 200 W MIN. WITH 16 dB GAIN PIN CONNECTION 3 r 1 3 DESCRIPTION The SD1411 is a silicon NPN transistor designed

SD2903

Contextual Info: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS

M113

Abstract: SD2904
Contextual Info: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 10 dB MIN. AT 400 MHz CLASS A OR AB .380 4LFL M113 ORDER CODE SD2904 DESCRIPTION The SD2904 is a gold metallized N-channel MOS field effect RF power transistor. The SD2904 is

SD1274-1

Abstract: M113 SD1274-01
Contextual Info: SD1274-01 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1274-01 BRANDING SD1274-1 PIN CONNECTION DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon

TH513

Abstract: HF SSB APPLICATIONS SD1733 M135
Contextual Info: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION

TTL 24v Level Converter

Abstract: TTL - 24v Level Converter converter 24V to 5v GS5T24-5D15 DC-DC CONVERTER 15V output
Contextual Info: GS5T24-5D15 5W TRIPLE OUTPUT DC-DC CONVERTER Type Vi GS5T24-5D15 17,5 to 30 Vo Io +5V 200 mA + 15 V 125 mA - 15 V – 125 mA DESCRIPTION The GS5T24-5D15 is a 5W DC-DC converter designed to provide three isolated outputs: 5V/200mA and a dual ±15V/±125mA.

SD1423

Abstract: SD1424
Contextual Info: SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL M156 epoxy sealed

Contextual Info: SGS-1H0MS0N :iLi gTMD(gI SD1274 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • 160 MHz ■ 13.6 VOLTS . COMMON EMITTER > P o u t = 30 W MIN. WITH 10 dB GAIN PIN CONNECTION 1 / - -s 4 DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

AM83135-030

Contextual Info: AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN

th513

Abstract: Planar choke M135 SD1733 ssb transistors
Contextual Info: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION DESCRIPTION

sd1405

Abstract: 60WpEp
Contextual Info: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz • 12.5 VOLTS • COMMON EMITTER • IMD 32 dB • GOLD METALLIZATION • POUT = 75 W MIN. WITH 13 dB GAIN M174 epoxy sealed DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF

Contextual Info: STEVAL-IPE003V1 Electricity Meter mono phase - Measurement Board 1 Current Transformer + Shunt Data Brief Features • Single-phase, 0.5 class accuracy guaranteed ■ UNOM(RMS) = 140 to 300V, INOM/IMAX(RMS) = 2/20A, fLIN = 45 to 65Hz, TAMB = -40 to +85 °C

choke coil

Abstract: SD1729 TH416
Contextual Info: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION

SD1899

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

Contextual Info: STEVAL-IPE002V1 Electricity Meter mono phase - Measurement Board 2 Current Transformers Data Brief Features • Single-phase, 0.5 class accuracy guaranteed ■ UNOM(RMS) = 140 to 300V, INOM/IMAX(RMS) = 2/20A, fLIN = 45 to 65Hz, TAMB = -40 to +85 °C ■

Contextual Info: Si SGS-THOMSON ILUgTM O têS S D 17 3 3 T H 5 1 3 RF & MICROW AVE TR A N S IS TO R S HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 14.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon