MONOLITHIC POWER SYSTEMS Search Results

35-Volt

Contextual Info: CHA4092 20-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS

Contextual Info: CHA3667a 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is

CHA5294

Contextual Info: CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA5297

Abstract: g1029
Contextual Info: CHA5297 37-40GHz High Power Amplifier GaAs Monolithic Microwave IC Vd1 Description The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

AN0005

Abstract: CHA5390TBF RO4003 PCB Rogers RO4003 substrate microwave IC 24-30GHz
Contextual Info: CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

AN0005

Abstract: CHA3092RBF RO4003
Contextual Info: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

Contextual Info: TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly

HSON8-P-0404-0

Contextual Info: TPD1048F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1048F Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1048F is a monolithic power IC intended for low-side load switching applications. The output has a vertical MOSFET,

CHA5390

Abstract: CHA5390-99F
Contextual Info: CHA5390 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

Monolithic Power Systems

Abstract: MP1521EK
Contextual Info: Part Numbering Nomenclature Monolithic Power Systems Part Numbering Example: MP1521EK–LF–Z M P 1521 Monolithic Power Part Number MP#### E K –LF –Z Temperature Grade Package Lead Free Tape & Reel –LF –Z C 0 to +70°C D Plated Die D -40 to +85°C

63826

Abstract: 52887 52854 17-311-1 150651
Contextual Info: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

Contextual Info: CHA5292a 37-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

diode Free 18-24GHz

Abstract: CHA5290
Contextual Info: CHA5290 17.7-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

OUT418

Contextual Info: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F High-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOSFET output. A monolithic power IC, it can directly drive a power

CHA7115

Abstract: x-Band High Power Amplifier 39dBm x-band power amplifier
Contextual Info: CHA7115 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at

CHA8100

Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

TPD1052F

Contextual Info: TPD1052F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1052F High-side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1052F is a monolithic power IC intended for high-side load switching applications. The input can be directly driven from CMOS or

CHA5093

Contextual Info: CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

MP310

Abstract: MP318 mp311 MP313 MP312 UP312A "micro power systems" log conformance dual npn
Contextual Info: M 20E D • bQTTMMM./OQOaaöQ M I C R O POWER "SYST EMS I N C P311 MICRO POWER SYSTEMS MP312 MP313 MP318 NPN DUAL MONOLITHIC SILICON NITROX* TRANSISTORS MONOLITHIC MATCHED PAIRS FOR DIFFERENTIAL AMPLIFIERS HIGH G A IN . LOG CONFORMANCE MP318 Are < In from ideal TYP.

cha7215

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power

CHA5296

Contextual Info: CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

TG111

Abstract: "Power over Ethernet" LTC4259A
Contextual Info: 19-4593; Rev 1; 1/10 High-Power, Quad, Monolithic, PSE Controllers for Power over Ethernet The MAX5965A/MAX5965B are quad, monolithic, -48V power controllers designed for use in IEEE 802.3af-compliant/pre-IEEE 802.3at-compatible power-sourcing equipment PSE . These devices provide powered device (PD)