MODEL TRANSISTOR 910 Search Results
MODEL TRANSISTOR 910 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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MODEL TRANSISTOR 910 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SUD45P03-15Contextual Info: SPICE Device Model SUD45P03-15 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sud45p03-1518-jul-08 | |
SUD45P03-10Contextual Info: SPICE Device Model SUD45P03-10 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sud45p03-1018-jul-08 | |
SUD30N03-30Contextual Info: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sud30n03-3018-jul-08 | |
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Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sup/sub75p03-0818-jul-08 | |
SUD45N05-20LContextual Info: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sud45n05-20l18-jul-08 | |
TR1111Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sup/sub60n06-1818-jul-08tr1111 | |
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Contextual Info: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sup/sub75n06-12l18-jul-08 | |
code c3 sot-23Contextual Info: MMBT4126LT1 Preferred Device General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage |
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mmbt4126lt1code c3 sot-23 | |
1417 transistor
Abstract: transistor 1417 vishay RESISTOR NETWORK
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18-jul-081417 transistortransistor 1417vishay resistor network | |
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Contextual Info: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal® |
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08-apr-05 | |
ssm2210
Abstract: MS-012AA SSM2210P SSM2210S SSM2210S-REEL
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ssm2210ssm2210pssm2210sssm2210s-reel+2 | |
SSM2220
Abstract: SSM2220P transistor 355 equivalent MS-012AA SSM2220S SSM2220S-REEL
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ssm2220ssm2220pssm2220sssm2220s-reel+5 | |
SSM2210P
Abstract: SSM2210 MS-012AA Package MS-012AA SSM2210S SSM2210S-REEL analog devices 902
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ssm2210ssm2210pssm2210sssm2210s-reel+4 | |
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Contextual Info: Audio Dual Matched NPN Transistor SSM2210 ORDERING GUIDE Package Package Description Option SSM2210P –40ºC to +85ºC PDIP P-8 SSM2210S –40ºC to +85ºC SOIC S-8 SOIC S-8 Ob s ol SSM2210S-REEL –40ºC to +85ºC e Temperature Range et Model REV. C Information furnished by Analog Devices is believed to be accurate and |
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ssm2210ssm2210sssm2210s-reelssm2210p+1 | |
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Operational Transconductance Amplifier pspice
Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
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cg22df2operational transconductance amplifier pspicetransistor c124c124 transistor+7 | |
transisTOR C124
Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
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transistor c124operational transconductance amplifier pspicec124 transistorcdt660+6 | |
VPO300
Abstract: OPA177 substitution dividing network basic diagram jfet discrete differential transistor JFET NPN AMPLIFIER AB-193 INA110 OPA177 broad rf power transistor texas OPA603
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vpo300opa177 substitutiondividing network basic diagramjfet discrete differential transistor+6 | |
VPO300
Abstract: OPA177 substitution AB-193 INA110 OPA177 OPA2111 OPA603 OPA621 REF200 NPN transistor which has frequency greater than 2
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opa177opa6211000pfina110+7 | |
mercedes
Abstract: AN-715 hyperlynx CMOS spice model
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an-715mercedeshyperlynxcmos spice model | |
BUF600X1
Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
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buf600x1iso120xbuf634xmpc104x1+6 | |
BUF600X1
Abstract: ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141
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a115eina117eina118eina120e+16 | |
HP5082-2835
Abstract: The Transistor Manual Japanese 1993 TRANSISTOR C-111 HP5082-2835 diode SCR PNP NPN emitter area electrostatic discharge transzorb i-v curve 3 Volt transzorb SCR Manual, General electric What is a TRANSZORB AD7893-10
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an-397hp5082-2835the transistor manual japanese 1993transistor c-111+7 | |
ADP2108
Abstract: ADP2108AUJZ-3.3-R7 adp2108aujz
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ug-039adp2108adp2108ujz-redykitadp2108-1+4 | |
bc577
Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
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opa660bc577agc opa6602n5460 simulation model+7 | |