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    MOD2001 Search Results

    MOD2001 Functional Equivalents (3)

    The Functional Equivalents tab will give you options that are likely to match the same function of MOD2001, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IPG20N06S4L26ATMA1 Infineon Technologies AG $0.8902 Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    SP000705588 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IPG20N06S4L-26 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    MOD2001 Datasheets (2)

    Sensitron Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MOD2001
    Sensitron Semiconductor FET Transistor, Standard Hermetic MOSFET Modules Original PDF 41.12KB 3
    MOD2001-G
    Sensitron Semiconductor FET Transistor: Standard Hermetic MOSFET Modules Original PDF 41.12KB 3

    MOD2001 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOD2018

    Abstract: MOD2002 MOD2004 MOD2005 MOD2009 MOD2011 MOD2015 MOD2019 MOD2001 MOD2022
    Contextual Info: tSENSITRON MODXX-XX SEMICONDUCTOR STANDARD HERMETIC MOSFET MODULES FEATURES: • High Power Density • Low Saturation Voltage V CE(SAT ) • Low Thermal Resistance (R θJC) INDUSTRIAL IGBT PRODUCT MAP ID (Amps) CONFIGURATION VDSS (V) 20 Half-Bridge 100


    Original
    MOD2007 MOD2014 MOD2018 MOD2022 MOD2001 MOD2004 MOD2011 MOD2015 MOD2019 MOD2023 MOD2018 MOD2002 MOD2004 MOD2005 MOD2009 MOD2011 MOD2015 MOD2019 MOD2001 MOD2022 PDF

    d2012 mosfet

    Abstract: D2010 P H D2010 d2009 D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010
    Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC MOSFET MODULES N - C h a n n e l M O S F E T C H A R A C T E R IS T IC S Continuous Drain Current lc @ Tc-25°C Pulsed Drain Current Tc=25°c 1 ms Volts Amps Amps 60 2 0 11’ 200 0.028


    OCR Scan
    Tc-25 D2001 D2002 D2003 MOD2007 MOD2008 D2009 D2010 MOD2011 D2012 d2012 mosfet D2010 P H D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010 PDF