MOD 4 COUNTER Search Results

RF antenna 433.92

Abstract: 433.92 wire antenna
Contextual Info: Totem Line flH R EL,. Via Foro dei Tigli, 4 • Phone : +39-0546941124 • Fax : +39-0546941660 • 1 47015 Modigliana FO Italy • http://www.aurel.it • E-mail: aurel@aurel.it Rubber flexible antenna • Antenna flessibile in gomma mod. mod. T T-A Flexible omnidirectional antenna suitable for 433.92 Mhz

Contextual Info: MOSEL-VITELIC V404J32and V404J36 1M x32and 1M x36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod­

DH311

Contextual Info: M OSEL v m u c PRELIMINARY V404J32 and V404J36 1M x 32 and 1M x 36 CMOS MEMORY MODULES Features Description u • ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod­

Contextual Info: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS Access Time

sweep

Abstract: 1 hz pulse generator El 3023
Contextual Info: Data Sheet 4 MHz Sweep Function Generators Models 4001A & 4003A 4001A 4003A Mod el Models 4001A and 4003A are 4 MHz sweep function generators. The sweep function offers linear or log sweep with variable sweep rates and widths. The model 4003A has the addition of a 20 MHz

HM50464P-15

Abstract: 50464P-12 50464CP-12 50464cp 50464P HM504 50464
Contextual Info: H M 5 0 4 6 4 S e rie s 65536-word x 4-bit Dynamic Random Access Memory • FEATURES • Page mod« capability • Single 5V ±10% HM 50464P Series • On chip substrate bias generator • Low power: 350 mW active, 20 mW standby • High speed: Access Time 120ns/150ns/200ns

Contextual Info: MEMORY MB814405D-60/60L/-70/70L CMOS 1,048,576 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814405D is a fully decoded CMOS Dynamic RAM DRAM}-that-contacts 4,194,304 memory cells accessible in 4-bit increments. The MB814405D features the “hyper page’ ' mod of operation which provides

Contextual Info: IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 I rac RAS Access Tim e 50 ns 60ns tcAC GAS Access Tim e 13ns 15ns •*AA ; Colum n Address Access Tim e

Contextual Info: MEMORY 4 M X 4 BIT FAST PAGg MOD E DYNAMIC RAM M 7400A-60/-70/-60L/" CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17400A is a fully decoded CMOS Dynamic RAM DRAM t e t contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V17400A features a “fast page” m od^of operation whereby high­

cas200

Contextual Info: Stgnsttes DoeunwntNo. ass- SON No. O w eriM ua Ju n *4 , ISSO Statt» Produci Spedllceben FAST 74F1766 Burst Mode DRAM Controller BMDC FAST Praduca TYPE FEATURES • Allows burat*moda acoaaa for aystsms using Nlbbla/Paga/Statle column mod* DRAMa • Complata oontrol of DRAM accost,

Contextual Info: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung

KMM5361003C6

Abstract: TAA 780 kmm5361003
Contextual Info: DRAM MODULE / _ 4 Mega Byte KMM5361003C/CG Fast Page Mode / 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung

Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal

Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KM41C1000

Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
Contextual Info: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

Contextual Info: MOSEL- VITELIC V404J232 and V404J236 2M X 32 and 2M X 36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The V404J236 Memory

Contextual Info: M O S E L VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The x32 modules are Ideal

hyundai tv hy 22 f circuit

Abstract: c 144 ESS HYM5C9256
Contextual Info: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin

Contextual Info: m m m m fa a a a a a a m — i ^ — H V P F R P A G F M O D F D Y N A M IC R A M CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8117405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8117405A features a “hyper page” mod«:.of operation whereby high­

Contextual Info: M O S E L V IT E U C P R E LIM IN A R Y V1780J32 2 M x 32 E D O M E M O R Y M O D U LE Features Description m 2,097,152 x 32 bit organization The V1708J32 memory module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 4 MoselVitelic 1M x 16 DRAMs. The x32 modules are ideal

APPLICATIONS OF mod 8 COUNTER

Abstract: mod 13 counter mod 10 counter mod 8 counter
Contextual Info: CSCUbler You may count on Combination Time and Pulse Meter General Description The combination counter consists of a running time meter and an adding coun­ ter. In the standard version, these two meters are connected in parallel, this means that the adding counter registers

AM FM RDS TUNER module

Abstract: AM FM TUNER module car AM FM TUNER module
Contextual Info: KEC t u n e r m o d u le TECH N ICA L DA TA KOREA ELECTRO N ICS CO.,LTD. ELECTRONIC AM /FM /M PX TUNER. FE A T U R ES • Super Compact 1 Pack FM+AM MW/LW Tuner. • Ideal for Car Stereo and Car CD System. • Upper Side Band Super Heterodyne System. • SD/SM and IP Counter Terminal for DTS, RDS System Application.

KCA333UA

Abstract: AM FM TUNER module car 999KHZ AM FM TUNER module 144khz murata filter Z 459
Contextual Info: K E C TUNER MODULE r• ~~w~-w~n. ~t ~~w~ A ~w T-v A KCA333UA/UH/EA/EH \ A AM TUNER C NC KOREA ELECTRONICS CO.,LTD. AM TUN ER FOR CAR AUDIO FE A T U R ES • Super Compact 3 -Gang AM MW/LW Electronic Tuner. • SD/SM Output Terminal and IF Counter Terminal for D TS System Application.