MMRF1306H Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

Product Selector Guide

Abstract: NI-400S-2S
Contextual Info: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high