MMIC N5 Search Results

marking N5 mmic

Abstract: NGA589
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

marking N5 mmic

Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

ZX85-12G-S

Abstract: PHA-1 LTE base station TB lte pha1 3 pha 20 base station lte TB-313 AN-60-041 PHA-1 mcl
Contextual Info: Technical Note LTE Performance vs. Output Power Model: PHA-1+ AN-60-041 LTE Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly

ZX85-12G-S

Abstract: 30 pha 20 PHA-1 AN-60-042 TB-313 amplifier mini-circuits MCL 321 TB313
Contextual Info: Technical Note TD-SCDMA Performance vs. Output Power Model: PHA-1+ AN-60-042 TD-SCDMA Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly

Contextual Info: Technical Note LTE Performance vs. Output Power Model: GVA-81+ AN-60-046 LTE Base Station MMIC Amplifier Mini-Circuits GVA-81+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: GVA-84+ AN-60-049 LTE Base Station MMIC Amplifier Mini-Circuits GVA-84+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: PGA-102+ AN-60-052 LTE Base Station MMIC Amplifier Mini-Circuits PGA-102+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: PSA-545+ AN-60-057 LTE Base Station MMIC Amplifier Mini-Circuits PSA-545+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: GVA-83+ AN-60-048 LTE Base Station MMIC Amplifier Mini-Circuits GVA-83+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: GVA-82+ AN-60-047 LTE Base Station MMIC Amplifier Mini-Circuits GVA-82+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,

Contextual Info: Technical Note LTE Performance vs. Output Power Model: PMA-545+ AN-60-054 LTE Base Station MMIC Amplifier Mini-Circuits PMA-545+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require high linear

Contextual Info: Technical Note LTE Performance vs. Output Power Model: PMA-545G1+ AN-60-055 LTE Base Station MMIC Amplifier Mini-Circuits PMA-545G1+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require high linear

marking N5 mmic

Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

Contextual Info: NBB-500 NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ „ „ „ „ GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS

SIRENZA MARKING

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

Contextual Info: NBB-500 NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: Micro-X, 4-Pin, Ceramic GND 4 Features      Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm P1dB@2GHz High P1dB of

Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features ̈ ̈ ̈ ̈ ̈ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

mmic amplifier marking code N5

Abstract: 0536E3 MMIC marking code R NCL capacitor gt Amplifier Micro-X "marking code" D marking e3 mmic HEMT marking P
Contextual Info: NBB-500 NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: Micro-X, 4-Pin, Ceramic Features      GND 4 Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm P1dB@2GHz High P1dB of

NLB-310

Abstract: NBB-300 NBB-310 NBB-400 NLB-300 NLB-310-E NLB-310-T1 NLB-400 MMIC Amplifier Micro-X marking D MMIC Amplifier Micro-X marking g
Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

NBB-500-D

Abstract: NBB-300 NBB-310 NBB-400 NBB-500 NBB-500-E NBB-500-T1 NLB-300 MMIC marking code R Amplifier Micro-X "marking code" D
Contextual Info: NBB-500 NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm

GaAs Amplifier Micro-X Marking k

Abstract: MMIC Amplifier Micro-X MARKING N6 RFMD NBB-300 NBB-310 NBB-400 NLB-300 NLB-310 NLB-310-E NLB-310-T1
Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

mmic amplifier marking code N3

Abstract: Amplifier Micro-X "marking code" D marking e3 mmic NLB-300-T1 GaN Bias 25 watt Amplifier Micro-X NBB-300 NBB-310 NBB-400 NLB-300
Contextual Info: NLB-300 NLB-300Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 13.0dB Gain, +11.1dBm

Contextual Info: NLB-400 NLB-400Cascadable Broadband GaAs MMIC Amplifier DC to 6GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic 3 GND 4 Features ̈ ̈ ̈ ̈ ̈ Reliable, Low-Cost HBT Design 15.5dB Gain, +12.0dBm