MMIC MAR 6 GHZ Search Results

11c7

Abstract: 10C6 12C4 XU1005-BD R10C6 R11C7
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

10C6

Abstract: 12C4 XU1005-BD R11C7 11-C-5
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

Contextual Info: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

Contextual Info: TGC4403-SM 8 - 15 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl = -0.8 V, Vg = -0.5 V Typical RF Output Frequency Range: 16-30 GHz Input Frequency Range: 8 - 15 GHz

TGC4403-SM

Abstract: IRL 1630
Contextual Info: TGC4403-SM 8 - 15 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Pout at 2x Input Freq dBm 30 Primary Applications Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl = -0.8 V, Vg = -0.5 V Typical Point-to-Point Radio

Contextual Info: TGA2525 2-18 GHz Low Noise Amplifier with AGC Key Features • • • • • • • • • • Measured Performance Primary Applications • • • 10 20 9 18 8 16 7 NF 14 6 Gain 12 5 10 4 8 3 6 2 4 1 2 4 6 8 10 12 14 16 18 Gain, IRL, ORL dB Frequency (GHz)

TGC4402-SM

Contextual Info: TGC4402-SM 18 – 26 GHz Packaged Upconverting Mixer Key Features • • • • • • • Measured Performance Primary Applications Conversion Loss dB Bias conditions: Vg = -0.9 V, LO Input @ 19 dBm, IF = 2GHz @ -5 dBm Typical 12 11 10 9 8 7 6 5 4 3

Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

EMM5068VU

Abstract: MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506
Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages

United Monolithic Semiconductors

Abstract: 27 31 GHz HPA CHA5042 monolithic amplifier MAR
Contextual Info: CHA5042 12.75-17 GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA5042 is a compact three-stage PHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. It provides typically more than 27dBm nominal output power at 1dB gain compression over the

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2711 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2711 PINNING FEATURES • Internally matched PIN DESCRIPTION

Marking G4 SOT363

Abstract: marking code G4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2771 PINNING FEATURES • Internally matched PIN DESCRIPTION

89122

Abstract: BGA2748 Philips 9510
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2748 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2748 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: MAR d a ta sh e et 8 Q iA V A N T E K MSA-0400 MODAMP Cascadable Silicon Bipolar M onolithic Microwave Integrated C ircuit A m plifiers October, 1989 Avantek Chip Outline1 Features • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 4.0 GHz

Contextual Info: •£ B 6 ’9 3 FEATURES DAICO INDUSTRIES, INC. d r • 0.05 - 3.5 GHz Frequency Range ■ Flat Frequency Response With Direct Gain Control ■ +22 dBm Output Power Capability ■ Matched to 50 Q VOLUME 4 «IS S U E # ! GaAs MMIC AMPLIFIERS I In T h is Issue:

Contextual Info: mar dam sheet 0 1992 0A VA N TEK MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek Chip Outline1 Features • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz

WW107

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm) Typ. damage) Typ. Typ. In

MAR-4SM MMIC

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm) Typ. damage) Typ. Typ. In

MMIC ww107 marking CODE

Abstract: MMIC MAR-3sm MAR-4SM MMIC AF190 RAM-8 Mini-Circuits 3SM diode mav 11 mar 11sm WW107 monolithic amplifier MAR
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm) Typ. damage) Typ. Typ. In

AF190

Abstract: PL-075 marking 119
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm) Typ. damage) Typ. Typ. In

mar 11sm

Abstract: WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm) Typ. damage) Typ. Typ. In

marking mmic mini-circuits

Abstract: AF190 VAM7 MMIC MAV 11
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 6 GHz MAR-SM MAV-A MAV-SM up to +18.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)