MMIC LA MARKING Search Results

Diplexer GSM 900

Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Description Product Features +34 dBm IIP3 RF: 800 – 960 MHz LO: 1000 – 1310 MHz IF: 200 – 350 MHz +17 dBm Drive Level Lead-free/Green SOIC8 package No External Bias Required

Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Features Product Description Functional Diagram The MH203A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH203A uses patented techniques

Diplexer 900 1800

Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Description Product Features Functional Diagram The MH203A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH203A uses patented techniques

M3432

Abstract: c4038
Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Description Product Features Functional Diagram The MH203A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH203A uses patented techniques

JESD22-A114

Abstract: MH203A MH203A-G MH203A-PCB
Contextual Info: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Information Product Description Product Features +34 dBm Input IP3 7.3 dB Conversion Loss RF: 800 – 960 MHz LO: 1000 – 1310 MHz IF: 70 – 350 MHz +17 dBm Drive Level Lead-free / RoHS-compliant /

Diplexer 900 1800

Abstract: MMIC LA marking ALPHA RF-800 datasheet JESD22-A114 MH205A MH205A-G MH205A-PCB M205A ALPHA RF-800 marking code 016 MMIC
Contextual Info: MH205A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Information Product Description Product Features +35 dBm Input IP3 7 dB Conversion Loss RF: 800 – 960 MHz LO: 700 – 890 MHz IF: 70 – 120 MHz +17 dBm Drive Level Lead-free / RoHS-compliant /

marking code 02 mmic

Contextual Info: SIEMENS CGY 40 GaAs MMIC D a t a s h e e t * Single-stage monolithic microwave 1C MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V

Contextual Info: MH1A The Communications Edge TM High Dynamic Range PCS-Band MMIC Mixer Product Features • • • • • • • Product Information Product Description +35 dBm IIP3 RF: 1700 – 2000 MHz LO: 1450 – 1950 MHz IF: 50 – 250 MHz +17 dBm Drive Level Lead-free/Green SOIC8 package

SOIC8 package

Abstract: rf match soic-8 c101 JESD22-A114 J-STD-020B MH103A MH103A-G MH103A-PCB
Contextual Info: MH103A The Communications Edge TM High Dynamic Range UMTS-Band MMIC Mixer Product Features Product Information Product Description Functional Diagram • +34 dBm IIP3 • RF: 1900 – 2200 MHz • LO: 1600 – 2150 MHz • IF: 50 – 300 MHz • +17 dBm Drive Level

Diplexer GSM 900

Contextual Info: MH205A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Description Product Features Functional Diagram The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH205A uses patented techniques

JESD22-A114

Abstract: J-STD-020B
Contextual Info: MH1A The Communications Edge TM High Dynamic Range PCS-Band MMIC Mixer Product Features Product Information Product Description • • • • • • Functional Diagram +35 dBm IIP3 RF: 1700 – 2000 MHz LO: 1450 – 1950 MHz IF: 50 – 250 MHz +17 dBm Drive Level

Contextual Info: MH103A The Communications Edge TM High Dynamic Range UMTS-Band MMIC Mixer Product Information Product Features Product Description • +34 dBm IIP3 • RF: 1900 – 2200 MHz • LO: 1600 – 2150 MHz • IF: 50 – 300 MHz • +17 dBm Drive Level • Low Cost SOIC-8 Package

JESD22-A114

Abstract: J-STD-020B MH103A MH103A-G MH103A-PCB MMIC marking code R
Contextual Info: MH103A The Communications Edge TM High Dynamic Range 1.9 – 2.7 GHz MMIC Mixer Product Features • • • • • • +34 dBm IIP3 RF: 1900 – 2700 MHz LO: 1600 – 2650 MHz IF: 50 – 300 MHz +17 dBm Drive Level Lead-free/green/RoHS-compliant SOIC-8 SMT package

Contextual Info: HMC252QS24 / 252QS24E v06.1112 GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3 GHz Typical Applications Features The HMC252QS24 / HMC252QS24E is ideal for: Low Insertion Loss 2 GHz : 0.9 dB • Base Station Single Positive Supply: VDD = +5V or +3.3V • CATV / DBS

Contextual Info: HMC322LP4 / 322LP4E v06.0112 SwitcheS - Multi-throw - SMt GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz Typical Applications Features this switch is suitable for usage in Dc - 8.0 Ghz 50ohm or 75-ohm systems: Broadband Performance: Dc - 8.0 Ghz high isolation: >30 dB@ 6 Ghz

MMIC marking code R

Abstract: hp mmic marking code
Contextual Info: r c a HEWLETT f t3 E Ê PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1120 Features • High D ynam ic Range C ascadable 50 Q or 75 Q Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm T ypical P i dB at 0.5 GHz • 12 dB T ypical 50

MMIC marking code S2

Abstract: amplifier mmic marking code S2 MMIC marking code R
Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1120 Features • High Dynamic Range Cascadable 50 £2 or 75 i l Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical Px ¿a at 0.5 GHz • 12 dB Typical 50 £2 Gain at

Contextual Info: Whol H E W L E T T mLZMPA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1120 F eatures • High Dynamic Range Cascadable 50 Q or 75 £2 Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical Pj ^ at 0.5 GHz • 12 dB Typical 50 Q Gain at

Contextual Info: SBB-4089Z Product Description Sirenza Microdevices’ SBB-4089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the

Contextual Info: GaAs MMIC GN01100B GaAs IC with built-in ferroelectric Unit: mm 0.12 +0.05 −0.02 1.25±0.1 M Di ain sc te on na tin nc ue e/ d • Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 1 3 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current

Contextual Info: GaAs MMIC GN01094B GaAs IC with built-in ferroelectric Unit : mm 0.12 +0.05 −0.02 1.25±0.1 M Di ain sc te on na tin nc ue e/ d • Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 1 3 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current

gaas spdt switch

Abstract: MMIC LA marking mmic marking L GN04022N
Contextual Info: GaAs MMIC GN04022N GaAs N-Channel IC 0.2±0.05 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d • Features 5° • Low insertion • High isolation • S-Mini type 6-pin package 1 Operating ambient temperature Storage temperature VDD 8 V Vctrl H -Vctrl(L)

Contextual Info: GaAs MMIC GN01096B GaAs IC with built-in ferroelectric Unit: mm 0.12 +0.05 −0.02 • Features 0.1 0.2±0.1 1.25±0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 For low noise amplifier of cellular phone Other communication equipment 1 0.425 M Di ain sc te on na tin nc

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic