MMIC ERA Search Results

KT 805

Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Contextual Info: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which

B37940-K5220-J62

Abstract: B54102 Siemens MMIC 0805CS-220XMBC siemens rs 1016 B37940K5220J62 SIEMENS gaas 0805CS-270XMBC Q62702-G44 marking code 02 mmic
Contextual Info: SIEMENS C G Y120 GaAs MMIC Datasheet * M onolithic microwave IC MMIC-Am plifier for mobile communication * Variable gain am plifier for GSM/PCN applications * Gain Control range over 50dB * 5 0 i l input and output matched * Low power consumption •O p eratin g voltage range: 2.7 to 6 V

Contextual Info: BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which

4.00mD

Contextual Info: ADfe SURFACE MOUNT GaAs MMIC SWITCH MLW 400MD SP4T NON-REFLECTIVE GaAs MMIC SWITCH WITH INTEGRAL TTL COMPATIBLE DRIVER 5 TO 2000 MHZ EATURES High Isolation Fast Switching Speed Ultra Low Current Consumption Surface Mount Package Low Video Generation DESCRIPTION

grm36 murata

Abstract: GRM36 HK1005 HK1608 NJG1714KC1
Contextual Info: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC QGENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

Contextual Info: SURFACE MOUNT GaAs MMIC SWITCH MLW 200MD SPDT NON-REFLECTIVE GaAs MMIC SWITCH WITH INTEGRAL TTL COMPATIBLE DRIVER 5 TO 2000 MHZ FEATURES ♦ High Isolation ♦ Ultra Fast Switching Speed ♦ Low Current Consumption ♦ Surface Mount Package ♦ Low Video Generation

Contextual Info: Thal H EW LETT mi’nM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features Description • Cascadable 50 Q Gain Block The MSA-0786 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

DIELECTRIC COAXIAL RESONATOR

Abstract: MMIC Downconverter ku band AKD2400 design dielectric resonator oscillator AKD2705
Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS' 0.5

MMIC era

Abstract: MMIC MAR-6 gali-84 TB-432-8A TCCH-80A TB-409-39 Mini-Circuits TB-409-39 MAV-11SM TB-409-74 MCL MAR-6
Contextual Info: MMIC Test Boards: Instructions for Use AN-60-036 1.0 Introduction Mini Circuits manufacture a wide range of 4-pin MMIC surface-mount and drop-in amplifiers. Family of test boards, for evaluating these devices, has been designed as to make them easy to use by customer.

Contextual Info: MMIC Test Boards: Instructions for Use AN-60-036 1.0 Introduction Mini Circuits manufacture a wide range of 4-pin MMIC surface-mount and drop-in amplifiers. Family of test boards, for evaluating these devices, has been designed as to make them easy to use by customer.

Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET

Contextual Info: Product Description SSW-424 Stanford M icrodevices’ SSW -424 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-6 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch

Contextual Info: Using the Catalog Specifications to Determine MMIC Reliability AN-60-030 Specification pages for MMIC (Microwave Monolithic Integrated Circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (Mean-Time-To-Failure) as a function of Junction Temperature. To use one of these graphs it is necessary to know the

1br rf

Contextual Info: Product Description SSW-424 Stanford M icrodevices’ SSW -424 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-6 GHz High Power G a As MMIC SPDT Switch T his single-pole, double-throw, non-reflective switch

Contextual Info: f X ^ I H EW LET T wLrM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0286 Features Description • C ascadable 50 Q Gain B lock The MSA-0286 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1023 Features This MMIC is designed for use in a push-pull configuration in a 25 i l system. The MSA-1023 can also be used as a single-ended amplifier in

Contextual Info: What H E W L E T T mLnM P a c k a r d Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Q Gain Block The MSA-0505 is a high perfor­ m ance m edium pow er silicon bipolar M onolithic Microwave Integrated C ircuit MMIC housed

Contextual Info: warn H E W L E T T mLfíM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features Description • C ascadable 50 Q Gain B lock The MSA-0611 is a low c o st silicon bipolar M onolithic M icrow ave In teg rated Circuit MMIC hou sed

Contextual Info: a r c s H EW L E T T w t PA CK A R D LM Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-2111 Features Description • C a sca d a b le 5 0 Q G ain B lo c k The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed

mmic era3

Contextual Info: MMIC Amplifier ERA-3+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

Contextual Info: MMIC Amplifier ERA-4XSM+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

Contextual Info: MMIC Amplifier ERA-2+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

Contextual Info: ERA-8SM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-8SM Reference Data:RDF-1211B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -35dBm, Icc = 36mA, Vd = 3.71V @Temperature = +25degC

1 928 498 057

Abstract: 1 928 498 058 ERA-1SM
Contextual Info: MMIC Amplifier ERA-1SM+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)