MMIC 557 Search Results

CMPA0060025F

Abstract: CMPA0060025F-TB CMPA2560002F JESD22
Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060025

Abstract: bonding wire cree A114D S-21105 CMPA0060025D
Contextual Info: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

TBTH06M20

Abstract: CMPA0060025F
Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060025F

Abstract: RF-35-0100-CH CMPA0060025F-TB
Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060025D

Contextual Info: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CD 2399 GP

Abstract: ic cd 2399 gp ic cd 2399 go
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

62398

Abstract: c2u 611 75816 1C250 uPC8128
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8128TB, µPC8151TB, µPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

cq 949

Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz

uc8151

Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

transistor wideband marking 545

Abstract: Marking GP marking 865 mmic mmic marking 865
Contextual Info: Application Note LOW-CURRENT SILICON MMIC AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES USAGE AND APPLICATIONS OF µPC8128TB, µPC8151TB, AND µPC8152TB Document No. P13914EJ1V0AN00 1st edition Date Published March 1999 N CP (K) Printed in Japan 1999 [MEMO]

sna476tr1

Abstract: sna4 sna476
Contextual Info: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.

nec 16312

Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Contextual Info: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan

SNA-476-TR2

Abstract: 110C 155C SNA-400 SNA-476 SNA-476-TR1 SNA-476-TR3 sna476tr1
Contextual Info: Product Description SNA-476 Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. DC-8 GHz, Cascadable

eudyna an

Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

Contextual Info: UPC1654A UPC1654B UPC1654P 1.0 GHz SILICON MMIC AMPLIFIER NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES 22 • BROADBAND PERFORMANCE: 10 to 1100 MHz 20 • INPUT AND OUTPUT MATCHED TO 50 Q CÛ • AVAILABLE IN CHIP OR HERMETIC PACKAGE m TJ 18 . EXCELLENT LINEARfTY

mmic sot-89

Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Contextual Info: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed

FUJITSU MMIC LNA

Abstract: FUJITSU LNA
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

MP 9720

Abstract: IrL 1520 N MGA-31716 0402 in 9720 avago mga x
Contextual Info: MGA-31716 0.1 W High Linearity Driver Amplifier Data Sheet Description Features Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features high gain, low operating current, low noise figure with good input and output

Contextual Info: Product Description SNA-476 Stanford M icrodevices’ SNA-476 is a GaAs m onolithic broadband am plifier MMIC housed in a low-cost surface mountable stripline ceram ic package. This am plifier provides 13dB of gain when biased at 70m A and 5.0V. DC-8 GHz, Cascadable

FMM5704X

Abstract: ZL 264
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: Stanford Microdevices SNA-687 Product Description Stanford M icrodevices’ SNA-687 is a GaAs m onolithic broadband am plifier MMIC housed in a low-cost drop-in plastic package. This am plifier provides 11dB of gain and +19dBm of P1dB when biased at 80m A and 5.9V.