MMC VERSION 4 Search Results
MMC VERSION 4 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 10067847-511RLF |
|
SD/MMC | |||
| 10067847-201RLF |
|
SD/MMC | |||
| 10067847-601RLF |
|
SD/MMC | |||
| 10125837-001SPGLF |
|
10125837-001SPGLF-SMALL MOQ VERSION | |||
| 10058831-110LF |
|
Connector PF version, 0.76 um Gold plating |
MMC VERSION 4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SDHC specification
Abstract: SD host controller vhdl tsmc 0.18um GPS clock code using VHDL GPS clock code using verilog vhdl code for memory card digital clock using logic gates sdio sdio memory silicon fingerprint technology
|
Original |
||
capacitor 103 250v
Abstract: Lbn45.75 PM1-M1.75 BT-N51KRI-LC4.75 capacitor+63v+1000+micro+f
|
Original |
1000hr capacitor 103 250v Lbn45.75 PM1-M1.75 BT-N51KRI-LC4.75 capacitor+63v+1000+micro+f | |
MMC specification
Abstract: CMD19 CMD55 CMD14 MMC card USB reader CMD13 cmd6 MMC version 4 CMD8
|
Original |
SEC-FAE-APP-001 July-2006, CMD14 CMD19) 26MHz) CMD55 15MHz) CMD13 CMD19 MMC specification CMD19 CMD14 MMC card USB reader CMD13 cmd6 MMC version 4 CMD8 | |
HBM 00-01H
Abstract: HE11020F mmc sd 2001 MMC version 2.11 LQFP80 MMC specification version 1.4
|
Original |
HE11020F 12MHz HBM 00-01H HE11020F mmc sd 2001 MMC version 2.11 LQFP80 MMC specification version 1.4 | |
omnidirectional MHz antenna
Abstract: RG58 male dual tnc
|
Original |
860MHz 1920MHz RG-58 omnidirectional MHz antenna RG58 male dual tnc | |
KLMBG4GE2A-A001
Abstract: KLMDGAGE2A-A001 32GB emmc KLMBG4GEAC-B001 SAMSUNG emmc KLMBG KLMAG2WE4AA001 klm8g KLMAG Samsung eMMC 4.41
|
Original |
KLMDGAGE2A-A001 128GB Class1500 Class400 KLMCG8GEAC-B001 Class2000 KLMCG8GE2A-A001 KLMBG4WE4A-A001 KLMBG4GE2A-A001 KLMDGAGE2A-A001 32GB emmc KLMBG4GEAC-B001 SAMSUNG emmc KLMBG KLMAG2WE4AA001 klm8g KLMAG Samsung eMMC 4.41 | |
mmc_write
Abstract: onenand xsr SAMSUNG NAND FTL KFAT XSR Porting Guide SAMSUNG NAND FLASH TRANSLATION LAYER samsung xsr abstract fore system m.a hindi K9K2G16U0M
|
Original |
||
samsung tfs4
Abstract: samsung xsr Flash Translation Layer XSR Extended Sector Remapper XSR Porting Guide onenand xsr FAT32 NAND XSR SAMSUNG NAND FLASH TRANSLATION LAYER S3C2410
|
Original |
||
samsung xsr
Abstract: FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER
|
Original |
agreement1250 samsung xsr FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER | |
|
Contextual Info: W86L388D Winbond Host Interface SD/MMC Memory Card Bridge W86L388D Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 2 1 08/2001 0.50 First published. 4/26/2005 0.6 Added lead free package W86L388-DG in ordering information 3 4 |
Original |
W86L388D W86L388-DG applica886-35-770066 | |
emmc 4.4 standard jedec
Abstract: GLS85VM1008A-M-I-LFWE-ND200 Specification eMMC 4.0 emmc bga eMMC data retention BGA EMMC
|
Original |
GLS85VM1008A JESD84-A44 52MHz 180mA GLS85VM1032A) 150mA GLS85VM1016A) 120mA GLS85VM1008A) S71425-F emmc 4.4 standard jedec GLS85VM1008A-M-I-LFWE-ND200 Specification eMMC 4.0 emmc bga eMMC data retention BGA EMMC | |
K9F1G08U0A
Abstract: SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics
|
Original |
W86L157 W86L157 48-pin produ480, K9F1G08U0A SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics | |
48-PIN
Abstract: FR30 GIO10 W86L488 W86L488AY W86L488Y ase qfn 48
|
Original |
W86L488 W86L488 48-QFN 48-PIN FR30 GIO10 W86L488AY W86L488Y ase qfn 48 | |
DIM200PHM33-A000Contextual Info: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces October 2001, version DS5464-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS |
Original |
DIM200PHM33-A000 DS5464-4 DS5464-5 DIM200PHM33-A000 | |
|
|
|||
W86L388
Abstract: 23GIO 48-PIN NDS352P W86L388D do-15 footprint sd5d14 MMC Electronics America
|
Original |
W86L388D W86L388D W86L388 23GIO 48-PIN NDS352P do-15 footprint sd5d14 MMC Electronics America | |
|
Contextual Info: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces June 2002, version DS5495-4.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-5.1 June 2002 |
Original |
DIM400GDM33-A000 DS5495-4 DS5495-5 | |
bi-directional switches IGBT
Abstract: DIM800DDM17-A000
|
Original |
DIM800DDM17-A000 DS5433-3 DS5433-4 240arantee bi-directional switches IGBT DIM800DDM17-A000 | |
12v to 1000v inverters circuit diagrams
Abstract: bi-directional switches IGBT ups circuit diagram using igbt DIM2400ESM17-A000
|
Original |
DIM2400ESM17-A000 DS5447-3 DS5447-4 12v to 1000v inverters circuit diagrams bi-directional switches IGBT ups circuit diagram using igbt DIM2400ESM17-A000 | |
IC 7800
Abstract: diode current 1200A DIM1200ESM33-A000
|
Original |
DIM1200ESM33-A000 DS5492-4 DS5492-5 IC 7800 diode current 1200A DIM1200ESM33-A000 | |
bi-directional switches IGBT
Abstract: DIM800DCM17-A000 25675
|
Original |
DIM800DCM17-A000 DS5444-3 DS5444-4 DIM800Darantee bi-directional switches IGBT DIM800DCM17-A000 25675 | |
DIM800NSM33-A000Contextual Info: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Replaces May 2002, version DS5486-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5486-4.1 June 2002 |
Original |
DIM800NSM33-A000 DS5486-3 DS5486-4 DIM800NSM33-A000 | |
DIM800DDM17-A000Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002 |
Original |
DIM800DDM17-A000 DS5433-3 DS5433-4 240arantee DIM800DDM17-A000 | |
|
Contextual Info: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces December 2001, version DS5495-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-4.0 May 2002 |
Original |
DIM400GDM33-A000 DS5495-3 DS5495-4 DIM400GDlity | |
DIM2400ESM17-A000Contextual Info: DIM2400ESM17-A000 DIM2400ESM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5447-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5447-4.1 July 2002 |
Original |
DIM2400ESM17-A000 DS5447-3 DS5447-4 DIM2400ESM17-A000 | |