MMBTA56L Search Results

marking 2GM

Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80

utc 2030

Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal

MMBTA55LT3G

Abstract: MMBTA56LT1 MARKING code GM SOT 23 MMBTA55 MMBTA55LT1 MMBTA55LT1G MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage

UTC MMBTA56

Abstract: utc 2030 MMBTA56L-AE3-R MMBTA55 MMBTA56 090 B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBTA56L-AE3-R

MMBTA56LT1G

Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT1G MMBTA55LT3G MMBTA56 MMBTA56LT1 MMBTA56LT3G
Contextual Info: MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage

transistor tic 2250

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range

MMBTA56LT1

Abstract: marking code 2GM SOT 23
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage

Contextual Info: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Contextual Info: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Contextual Info: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80

MMBTA56LT1G

Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT1G MMBTA55LT3G MMBTA56 MMBTA56LT1 MMBTA56LT3G
Contextual Info: MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L
Contextual Info: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80

Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

Contextual Info: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage

SMMBTA56LT1G

Abstract: SMMBTA56
Contextual Info: MMBTA55L Series, MMBTA56L Series, MMBTA56L Series Driver Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

2H SOT23

Contextual Info: MO TORO LA SC 1EË D | L>3fc.?ES4 QGßS^Tö S | X S TR S/ R F M A X IM U M RATINGS - f p - t f ' •' MMBTA55L Symbol Rating MMBTA56L U nit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V

Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current

Contextual Info: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6

SOT 363 marking CODE 2H

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector – Emitter Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ‘ Motorola Preferred Device BASE MAXIMUM RATINGS Symbol MMBTA55 MMBTA56 C ollector-E m itter Voltage VCEO -6 0 -8 0 Vdc C ollector-B ase Voltage VCBO -6 0 -8 0 Vdc

2GM sot

Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1 MMBTA56LT3 2gm marking code
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector–Base Voltage –60 –80 VCBO MMBTA55 MMBTA56 Emitter–Base Voltage