MMBTA56 ON Search Results

MMBTA55

Abstract: MMBTA56
Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <

Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <

MMBTA05

Abstract: MMBTA06 MMBTA55 MMBTA56
Contextual Info: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

MMBTA55

Abstract: MMBTA56 J-STD-020A MMBTA05 MMBTA06
Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

QW-R206-041

Abstract: MARKING 1G TRANSISTOR
Contextual Info: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER

Amplifier transistor

Contextual Info: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER

Contextual Info: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted

MMBTA56

Contextual Info: MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage

Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

MMBTA56LT1

Abstract: marking code 2GM SOT 23
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage

Contextual Info: MCC MMBTA55 THRU MMBTA56
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

Contextual Info: SEMICONDUCTOR TECHNICAL DATA MMBTA06 EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA56. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage VC B O 80

Contextual Info: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min

k1g transistor

Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55 / MMBTA56 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min

Contextual Info: SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA06. DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -80 V Collector-Emitter Voltage

marking 2GM

Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80

MPSA56

Abstract: BEL 188 pnp TRANSISTOR characteristics CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Contextual Info: MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25°C unless otherwise specified. Parameter

MMBTA06

Abstract: MMBTA56
Contextual Info: SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Complementary to MMBTA06 E B L L H RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5

Contextual Info: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H : h - A 7 TOR VIEW Mechanical Data_

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA56 IME D | TibMlMS O G O ? ^ ? 7 | PNP EPfTAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

marking code C1H

Abstract: k1g marking C1G Transistor MARKING
Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA55 / MMBTA56 Ideal for Low Power Amplification and Switching

1gm transistor

Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Contextual Info: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is

2GM H transistor

Abstract: 2GM TRANSISTOR transistor marking SA p sot-23
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 Ì3.1Ì .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the NPN