MMBT8050CLT1
Abstract: MMBT8050C MMBT8050DLT1 MMBT8550 MMBT8050D MMBT8550CLT1 MMBT8050
Contextual Info: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050C
MMBT8050DLT1
MMBT8550
MMBT8050D
MMBT8050
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050D MMBT8050C MMBT8550CLT1 SEMTECH
Contextual Info: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050D
MMBT8050C
SEMTECH
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MMBT8050C
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550CLT1 MMBT8050D
Contextual Info: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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Original
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050C
MMBT8050DLT1
MMBT8050D
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8550C MMBT8050DLT1 MMBT8550DLT1 MMBT8050 MMBT8550D
Contextual Info: MMBT8550CLT1 / MMBT8550DLT1 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050CLT1 and MMBT8050DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
100mA
500mA
500mA,
50MHz
MMBT8550C
MMBT8550DLT1
MMBT8050
MMBT8550D
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050C MMBT8050D MMBT8050 MMBT8550CLT1
Contextual Info: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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Original
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050C
MMBT8050D
MMBT8050
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550DLT1 MMBT8550C MMBT8550D
Contextual Info: MMBT8550CLT1 / MMBT8550DLT1 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050CLT1 and MMBT8050DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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Original
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
100mA
500mA
500mA,
50MHz
MMBT8550DLT1
MMBT8550C
MMBT8550D
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MMBT8050
Abstract: MMBT8050CLT1 MMBT8050C MMBT8050D MMBT8550 MMBT8050DLT1 MMBT8550CLT1
Contextual Info: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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Original
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050
MMBT8050C
MMBT8050D
MMBT8550
MMBT8050DLT1
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PDF
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550C MMBT8550D MMBT8550
Contextual Info: MMBT8550CLT1 / MMBT8550DLT1 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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Original
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
MMBT8050DLT1
MMBT8550C
MMBT8550D
MMBT8550
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PDF
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MMBT8550D
Abstract: MMBT8050CLT1 MMBT8550C MMBT8550CLT1 mmbt8550 MMBT8050DLT1
Contextual Info: MMBT8550CLT1 / MMBT8550DLT1 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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Original
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
MMBT8550D
MMBT8550C
mmbt8550
MMBT8050DLT1
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PDF
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