MMBT7002 Search Results

MMBT7002K

Contextual Info: MMBT7002K MMBT7002K N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp N N Version 2011-02-01 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

mmbt7002

Abstract: mmbt7002 sot-23
Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS ON • Voltage controlled small signal switching • High saturation current capability • High speed switching Drain Gate 1.Gate 2.Source 3.Drain

MMBT7002K

Abstract: K72 MARKING SOT-23
Contextual Info: MMBT7002K MMBT7002K N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp N N Version 2012-01-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3

Contextual Info: MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VDSS 60 V 60 V ± 20 ± 40 115 800 V Drain Source Voltage Drain Gate Voltage (RGS ≤ 1 MΩ)

MMBT7002K

Abstract: low igss Zero-Gate Voltage Drain Current
Contextual Info: MMBT7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low on resistance RDS ON • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV Drain Gate 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Source Absolute Maximum Ratings (Ta = 25 OC)

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

MMBT7002

Abstract: mmbt7002 sot-23
Contextual Info: MMBT7002 MMBT7002 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp N N Version 2011-02-01 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code

Contextual Info: MMBT7002W MMBT7002W N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N N Version 2011-02-01 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm] 1=G 2=S 3=D Power dissipation – Verlustleistung

10a1.103g

Abstract: altera EPM7032LC44-15 manual PLC Communication cables pin diagram hitachi resistor dale 1 103g 10A1 103G RPX 10 PLC programming Intel Evaluation Board 82930 MALLORY CAPACITOR CATALOG MC74HC132D dale 103G
Contextual Info: 8x93x Family Universal Serial Bus Evaluation Board Manual May 1997 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of