MMBT5551-G) Search Results
MMBT5551-G) Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MMBT5551-G1 | Zowie Technology | High Voltage Transistor NPN silicon | Original | 86.48KB | 4 | ||
MMBT5551-G(RANGE:100-200)
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JCET Group | MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. | Original | ||||
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MMBT5551-G(RANGE:200-300)
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JCET Group | MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. | Original |
MMBT5551-G) Price and Stock
Select Manufacturer
Comchip Technology Corporation Ltd MMBT5551-GRF Bipolar Transistors VCEO=160V IC=600mA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5551-G | 2,917 |
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Buy Now | |||||||
Unisonic Technologies Co Ltd MMBT5551G-B-AE3-RMMBT5551G-B-AE3-R by UNISONIC is a high-voltage NPN transistor, ideal for switching applications. It features a Vceo of 160V, Ic of 600mA, and is RoHS compliant, making it suitable for various electronic circuits. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5551G-B-AE3-R | 3,000 | 1 |
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Buy Now | ||||||