MMBT3906 TP Search Results

MMBT3906 PHILIPS

Abstract: MHC462 MMBT3904 MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 MMBT3906 PNP switching transistor Product specification Supersedes data of 2000 Apr 11 2003 Mar 18 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA

MMBT3904

Abstract: MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA

MMBT3906-2A

Abstract: MMBT3904 MMBT3906
Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2009-04-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-10-17 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

MMBT3906 NXP

Abstract: MGD624 mmbt3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 QUICK REFERENCE DATA FEATURES • Collector current capability IC = −200 mA

MMBT3906 PHILIPS

Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).

Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

MMBT3906

Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

Contextual Info: MMBT3906 MMBT3906 Surface mount general purpose Si-epitaxial transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-11-07 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B

MMBT3906

Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3906 product family SOT-23 Plastic-Encapsulate Biploar Transistors

MMBT3906

Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

TRANSISTOR S2A

Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

sot23 s1a marking

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

transistor marking S2A

Abstract: SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

s2A SOT23

Abstract: marking s2A sot23 SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

transistor marking s2a

Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906