MMBT1616 Search Results
MMBT1616 Datasheets (10)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MMBT1616 | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR | Original | 58.23KB | 4 | ||
| MMBT1616A | Galaxy Semi-Conductor Holdings | NPN Silicon Epitaxial Planar Transistor | Original | 204.38KB | 4 | ||
| MMBT1616A | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR | Original | 58.23KB | 4 | ||
| MMBT1616A-G-TP |
|
Interface | Original | 465.21KB | 4 | ||
| MMBT1616A-L-TP |
|
Interface | Original | 465.21KB | 4 | ||
| MMBT1616A-X-AE3-R | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR | Original | 58.23KB | 4 | ||
| MMBT1616A-Y-TP |
|
Interface | Original | 465.21KB | 4 | ||
| MMBT1616-X-AE3-R | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR | Original | 58.24KB | 4 | ||
MMBT1616A(RANGE:135-270)
|
JCET Group | MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. | Original | ||||
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MMBT1616A(RANGE:200-400)
|
JCET Group | MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. | Original |