MMA719 Search Results
MMA719 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: MMA719 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA719-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized | Original | MMA719 MMA719-6060 | |
| semiconductor A 6060Contextual Info: MMA719 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA719-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized | Original | MMA719 MMA719-6060 semiconductor A 6060 | |
| MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode 
 | Original | foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode | |
| tunnel diode GaAs
Abstract: jesd 00E-12 MMA703 MMA701 MMA705 p-hemt GaAs tunnel diode JESD22*108 MMA704 
 | Original |