MJF16206
Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Text: IflOTb 1-33-OI Order this data sheet by MJF16206 /D SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJH16206 are state-of-the-art , MJF16206 is UL Recognized ⢠Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive Storage , MJF16206 MJH16206 MJW16206 POWER TRANSISTORS 12 AMPERES 1200 VOLTS â VQES 50 and 150 WATTS Rating Symbol MJF16206 MJH16206 MJW16206 Unit Collector-Emitter Breakdown Voltage VCES 1200 Vdc
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b3b7254
1-33-OI
MJF16206/D
MJF16206
MJH16206
AN1040
MJF16206
MJH16206
MJW16206
MTP12N10 pin configuration
transistor D 1557
K1194
MPF930
TMJE210
ci mc7812
MC1391P
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ex 3863
Abstract: MJf16206
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection , 6.5 Amps Continuous Rating - 12 Amps Max Pulsed Rating - 15 Amps Max · Isolated MJF16206 Is UL , . 1.0 MHz) Collector-Heatsink Capacitance - MJF16206 Isolated Package (Mounted on a 1' x 2 ' x 1/16
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MJF16206
MJW16206
AN1040.
ex 3863
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TP12N10
Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection , 12 Amps Max Pulsed Rating - 15 Amps Max · Isolated MJF16206 is UL Recognized · Fast Switching: 100 , , lc - 0.5 A, ftest - 1-0 MHz) Coilector-Heatsink Capacitance - MJF16206 Isolated Package (Mounted on
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MJW16206
MJF16206
AN1040.
TP12N10
je210
desaturation design
1200 volt npn
MPF930
MTP8P10
MUR8100E
ex 3863
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2001 - MDC1000A
Abstract: 1811P3C8 MDC1000 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100E
Text: ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS The MJF16206 and the MJW16206 are stateoftheart SWITCHMODEt bipolar power transistors , Rating - 12 Amps Max Pulsed Rating - 15 Amps Max · Isolated MJF16206 is UL Recognized · Fast , 1000 100 2250 250 ns SWITCHING CHARACTERISTICS CollectorHeatsink Capacitance - MJF16206
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MJW16206
MJF16206
MJW16206
r14525
MJW16206/D
MDC1000A
1811P3C8
MDC1000
2N5337
2N6191
MR856
MTP8P10
MUR8100E
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1996 - 1811P3C8
Abstract: TO247AE MJF16206 2N5337 2N6191 MJW16206 MR856 MTP8P10 2n533 MUR8100E
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar power transistors. They are specifically , Isolated MJF16206 is UL Recognized Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive , Capacitance - MJF16206 Isolated Package (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
1811P3C8
TO247AE
2N5337
2N6191
MR856
MTP8P10
2n533
MUR8100E
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MCR225-2FP
Abstract: mac15 mac21B MCR225-4FP MAC223 MAC-223 MCR225-6FP MJF10012 MCR218-8FP MAC21B-4FP
Text: MJF16212* 800 1500 MJF16018* 12 500 1200 MJF16206 * 15 500 1000 1000 MJF16010A MJF16210* (2
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221C-02
O-220
T2500BFP
T2500DFP
T2500MFP
T2500NFP
MAC21B-4FP
MAC218-6FP
MAC218-8FP
MAC218-10FP
MCR225-2FP
mac15
mac21B
MCR225-4FP
MAC223
MAC-223
MCR225-6FP
MJF10012
MCR218-8FP
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1995 - MJ11016 equivalent
Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar power transistors. They are specifically , Isolated MJF16206 is UL Recognized Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive , 2250 250 ns SWITCHING CHARACTERISTICS CollectorHeatsink Capacitance - MJF16206 Isolated
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
MJ11016 equivalent
DIODE MOTOROLA 633
MTP12N10 pin configuration
726 MOTOROLA TRANSISTORS
high voltage CRT transformer
MC1391
MC1391P
MJ11016
PK MUR1100
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P10T7
Abstract: No abstract text available
Text: MW16206 or MJF16206 m onitor specific, 1200 volt bipolar power transistor. · · · · 1200 Volt Blocking
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MR10120E
MW16206
MJF16206
MR10otorola
MR10120E
D0flbM30
P10T7
P10T7
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1996 - 2N5337
Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar power transistors. They are specifically , Isolated MJF16206 is UL Recognized Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive , Capacitance - MJF16206 Isolated Package (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
2N5337
2N6191
MR856
MTP8P10
MUR8100
MUR8100E
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1996 - 1811P3C8
Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar power transistors. They are specifically , Isolated MJF16206 is UL Recognized Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive , Capacitance - MJF16206 Isolated Package (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
1811P3C8
2N5337
2N6191
MR856
MTP8P10
MUR8100
MUR8100E
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U10120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MUR10120E/D SEMICONDUCTOR TECHNICAL DATA SCANSWITCH⢠Power Rectifier M UR10120E For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstand ing performance of the MUR10120E is fully realized when paired with either the MJH16206 or MJF16206 monitor specific, 1200 volt
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MUR10120E/D
UR10120E
MUR10120E
MJH16206
MJF16206
L3b72SS
U10120
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MR10120E
Abstract: MJH16206 MJF16206 Applications MJF16206
Text: Order this data sheet by MR10120E/D MOTOROLA _ SEMICONDUCTOR â hhhhibhh TECHNICAL DATA SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state-of-the-art Power Rectifier is specifically designed for use as a Damper Diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MR10120E is fully realized when paired with either the MJH16206 or MJF16206 monitor specific, 1200 volt bipolar
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MR10120E/D
MR10120E
MJH16206
MJF16206
MR10120E
25125R
MR10120E/D
MJF16206 Applications
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1996 - MJF16206
Abstract: MJH16206 MUR10120E U10120E U10120
Text: MOTOROLA Order this document by MUR10120E/D SEMICONDUCTOR TECHNICAL DATA SCANSWITCHTM Power Rectifier MUR10120E For High and Very High Resolution Monitors This stateoftheart power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MUR10120E is fully realized when paired with either the MJH16206 or MJF16206 monitor specific, 1200 volt bipolar
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MUR10120E/D
MUR10120E
MUR10120E
MJH16206
MJF16206
U10120E
U10120
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MJH16206
Abstract: B-01 MJF16206 Transient motorola
Text: Order this data sheet by MR10120E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state-of-the-art Power Rectifier is specifically designed for use as a Damper Diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MRIO120E is fully realized when paired with either the MJH16206 or MJF16206 monitor specific, 1200 volt bipolar power transistor
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MR10120E/D
MRIO120E
MJH16206
MJF16206
Box20912;
MK145BP,
432-l,
MRIO120E
B-01
Transient motorola
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U10150E
Abstract: rectifier diode 6 amp 400 volt u10150 IR25750 rectifier diode 20 amp 800 volt rectifier diode 20 amp 1200 volt U10120 U1015 U10120E blocking diode 20 amp 1200 volt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SCANSWITCH ⢠Power Rectifier For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MUR10120E is fully realized when paired with either the MJH16206 or MJF16206 monitor specific, 1200 volt bipolar power transistor. ⢠1200 Volt Blocking Voltage ⢠20 mJ
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MUR10120E
MJH16206
MJF16206
U10150E
rectifier diode 6 amp 400 volt
u10150
IR25750
rectifier diode 20 amp 800 volt
rectifier diode 20 amp 1200 volt
U10120
U1015
U10120E
blocking diode 20 amp 1200 volt
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Not Available
Abstract: No abstract text available
Text: Bandwidth Product (VCE = 10 Vdc, Iq = 0.5 A, ftest = 1 0 MHz) Collector-Heatsink Capacitance â MJF16206
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MJW16206/D
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Text: STI Type: MJF16206 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1200 ICEV: ICEV A: hFE: hFE A: VCE: VBE: IC: COB: fT: 3.0 Case Style: TO-218 ISO: Industry Type: MJF16206 STI
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MJE8502A
O-220AB/TO-220:
MJF16010A
O-254
MJF16018
MJF16206
MTH13N50
MTM565
MRF531
MM3220
MM1758
MM3904
MM3004
mth5n100
MTM26N40E
MTH7N50
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2001 - 2SC123
Abstract: sec tip41c sec tip42c TRANSISTOR REPLACEMENT GUIDE TRANSISTOR tip41c pin out image Motorola transistors MJE3055 TO 127 TRANSISTOR BC 327 2sc1061 equivalent transistors BC 458 pnp pin configuration NPN transistor tip41c
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SCANSWITCHTM MJW16206 POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar power , Rating - 12 Amps Max Pulsed Rating - 15 Amps Max Isolated MJF16206 is UL Recognized Fast Switching: 100 , = 0.5 A, ftest = 1.0 MHz) MHz pF CollectorHeatsink Capacitance - MJF16206 Isolated Package
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MJW16206
MJF16206
MJW16206
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SC123
sec tip41c
sec tip42c
TRANSISTOR REPLACEMENT GUIDE
TRANSISTOR tip41c pin out image
Motorola transistors MJE3055 TO 127
TRANSISTOR BC 327
2sc1061 equivalent
transistors BC 458 pnp
pin configuration NPN transistor tip41c
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1995 - 2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: MJF16006A MJF16010A MJF16204 MJF16206 MJF16210 MJF16212 MJH16002 MJH16004 MJH16106 MJW16210
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: No file text available
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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IGBT M16 100-44
Abstract: GM378 SEMICON INDEXES Ericsson SPO 1410 Kt606 Transistor B0243C ASEA HAFO AB transistor 8BB smd Ericsson RBS 6102 GD243
Text: No file text available
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W211d
W296o
W211c
IGBT M16 100-44
GM378
SEMICON INDEXES
Ericsson SPO 1410
Kt606
Transistor B0243C
ASEA HAFO AB
transistor 8BB smd
Ericsson RBS 6102
GD243
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