MJ MARKING SOT23 Search Results

DIODE D29 -08

Contextual Info: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

marking k04

Abstract: STK004SF
Contextual Info: STK004SF Advanced N-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=20V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40mΩ(Max.) D G Ordering Information

DIODE k03

Abstract: BVDSS-30V STK003SF marking code K03
Contextual Info: STK003SF Advanced N-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=30V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40mΩ(Max.) D D G G Ordering Information

STJ004SF

Abstract: 150 j04
Contextual Info: STJ004SF Advanced P-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=-30V Min. Low VGS(th) : VGS(th)=-0.7~-1.4V Small footprint due to small package Low RDS(on) : RDS(on)=91mΩ(Max.) D D G G Ordering Information

STT5NF30L

Contextual Info: STT5NF30L N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS on ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4A TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™”

Contextual Info: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59

BSR92P

Contextual Info: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -250 V 11 W -0.14 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59

STK004SF

Abstract: marking k04 diode
Contextual Info: STK004SF Semiconductor N-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=0.6~1.2V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 19mΩ (Typ.) Ordering Information Type NO.

STK7002B

Contextual Info: STK7002B Semiconductor N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=60V Min. Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) :RDS(on)=2.8Ω(Typ.) Ordering Information

Contextual Info: STJ004SF Semiconductor P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=-0.7~-1.4V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 61mΩ (Typ.) Ordering Information Type NO.

Contextual Info: STK7002B Semiconductor N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=60V Min. Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) :RDS(on)=2.8Ω(Typ.) D

STK003SF

Abstract: STK003 DSA002520 DIODE k03 STK00
Contextual Info: STK003SF Semiconductor N-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=0.6~1.2V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 27mΩ (Typ.) Ordering Information Type NO.

STJ004SF

Contextual Info: STJ004SF Semiconductor P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=-0.7~-1.4V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 61mΩ (Typ.) Ordering Information Type NO.

STJ001SF

Contextual Info: STJ001SF Semiconductor P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=-0.6~-1.4V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 68mΩ (Typ.) Ordering Information Type NO.

IRLMS 4502 D

Abstract: EIA-541 IRLMS6802 P-Channel mosfet 400v 400v p-channel mosfet integral 4502
Contextual Info: PD- 91848E IRLMS6802 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 D 3 4 S VDSS = -20V D G RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier

PG-SOT23

Abstract: BSS316N JESD22-A114 L6327
Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

bsr802

Abstract: BSR802N GPS09473 HLG09474 L6327
Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23

mosfet

Abstract: EIA-541 IRLMS4502 IRLMS6702
Contextual Info: PD- 93759B IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier

BSR802N

Abstract: GPS09473 HLG09474 L6327
Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23

BSR302N

Abstract: GPS09473 HLG09474 L6327 GS1660
Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

BSR202N

Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06
Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23

BSS315P

Abstract: BSS315 L6327 PG-SOT23
Contextual Info: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID •Logic level (4.5V rated) -1.5 • Avalanche rated A PG-SOT23 • Qualified according to AEC Q101

PG-SOT23

Contextual Info: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free