MJ 10261 Search Results

Contextual Info: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z Rev.1.10 2004.03.08 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin

RC21 SERIES

Abstract: DPS01 BC5 CSR CSR BC5 runing led circuit datasheet 073D1 Nippon capacitors
Contextual Info: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z Rev.1.30 2004.03.25 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin

0C72

Abstract: THEFT CSR BC5 BC5 CSR rc21 series bc6 csr block 106416 ccd board crt OSD on-screen display OSD data slicer
Contextual Info: M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP REJ03B0094-0100Z Rev.1.00 May 18, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ/MJA-XXXFP and M306V7FG/FH/FJ/FJAFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged

CSR BC4

Abstract: CSR BC5 CSR BC6 BC5 CSR runing led circuit datasheet DSC02 073D1 Nippon capacitors
Contextual Info: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0140Z Rev.1.40 Oct 06, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin

CSR BC5

Abstract: RBS 2106 installation procedures BC5 CSR CSR BC6 RBS 2102 installation C2H04 RBS 2106 operating weight 06C001 dps01 DSC112
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

100N120C3

Contextual Info: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

100N120C3

Contextual Info: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

Contextual Info: Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

IXYN100N120C3

Abstract: 100N120 100N120C3
Contextual Info: Advance Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 86A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXYN100N120C3H1

Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Preliminary Technical Information IXYK100N120C3 IXYX100N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYK100N120C3 IXYX100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXYX100N120C3

Abstract: 100N120 max3052 IXYK100N120C3 100N120C3 IXYX
Contextual Info: Advance Technical Information IXYK100N120C3 IXYX100N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH4N150

Abstract: 4n150
Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH4N150

Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Abstract: 3N150 T3N1 Vdss 1500V
Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ