MITSUBISHI IGBT 100A Search Results
MITSUBISHI IGBT 100A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GT50J123 |
![]() |
IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
GT30J122A |
![]() |
IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
GT20J121 |
![]() |
IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
GT30J121 |
![]() |
IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
GT20J341 |
![]() |
IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
MITSUBISHI IGBT 100A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di |
OCR Scan |
CM100E3U-12H | |
Contextual Info: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di |
OCR Scan |
CM100E3U-24H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di |
OCR Scan |
CM50E3U-24H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM50TF-28H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge con figuration with each transistor hav |
OCR Scan |
CM50DY-12H -100A/ | |
Contextual Info: MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM100TU-24H | |
CM5024
Abstract: mitsubishi IGBT Modules Mitsubishi Electric IGBT MODULES MITSUBISHI cm50tf-24h CM50TF-24H mitsubishi electric igbt module Mitsubishi servo module
|
OCR Scan |
CM50TF-24H n10-3 CM5024 mitsubishi IGBT Modules Mitsubishi Electric IGBT MODULES MITSUBISHI cm50tf-24h mitsubishi electric igbt module Mitsubishi servo module | |
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM100TF-24H | |
Contextual Info: MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM100TU-12H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM50TU-24H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor |
OCR Scan |
CM50TF-12H | |
Contextual Info: MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half-bridge configu ration with each transistor having |
OCR Scan |
CM50DY-28H | |
CM100DY-24HContextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half-bridge configu ration with each transistor having a |
OCR Scan |
CM100DY-24H -200A/ CM100DY-24H | |
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge con figuration, w ith each transistor |
OCR Scan |
CM100TF-12H | |
|
|||
Contextual Info: MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of four IGBTs in an H-Bridge configura tion, with each transistor having a |
OCR Scan |
CM100BU-12H | |
calculation of IGBT snubber
Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
|
Original |
00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module | |
V23990-k438Contextual Info: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering |
Original |
20-to-70 37NAB12T4V1 38NAB12T4V1 V23990-K438-F60-PM 37AC12T4V1 V23990-K439-F60-PM 38AC12T4V1 V23990-K430-F60-PM 39AC12T4V1 Oct-14 V23990-k438 | |
CM100RX-24AContextual Info: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-24A CM100RX-24A | |
Vn36
Abstract: CM100RX-24A
|
Original |
CM100RX-24A 48K/W Vn36 CM100RX-24A | |
Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A 85K/W | |
DIODE EVP 28Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A DIODE EVP 28 | |
Contextual Info: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-24A | |
DIODE T25Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A 85K/W DIODE T25 | |
Contextual Info: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov |
OCR Scan |
CM100DU-24H -200A/ |