rd02mus1
Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-017
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
175MHz
440MHz
450MHz
470MHz
AN-UHF-017
146MHz
488-MHz
RD02MUS1 equivalent
ANUHF017
MITSUBISHI APPLICATION NOTE RF POWER
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RD01MUS1
Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with
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AN-UHF-019
RD01MUS1
RD01MUS1.
RD01MUS1:
022XA"
136MHz
155MHz
175MHz
520MHz
0mm/50
micro strip line
MITSUBISHI APPLICATION NOTE RF POWER
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RD09MUP2
Abstract: 555 application note
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
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AN-UHF-072
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
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RD12MVP1
Abstract: RD12MVS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
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AN-VHF-034
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
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RD07MVS1
Abstract: micro strip line
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-018-B
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
micro strip line
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AN-UHF-027-B
Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency
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AN-UHF-027-B
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
AN-UHF-027-B
450-520MHz)
adj 2576
6926 b 946
MITSUBISHI APPLICATION NOTE RF POWER
mitsubishi 5247
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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AN-900-006
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
17mml
MITSUBISHI APPLICATION NOTE RF POWER
gp 735
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diode gp 429
Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data
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AN-900-028
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
diode gp 429
RD01MUS1
RD07M
RD07MVS
AN-900-028
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RD07MVS1
Abstract: RD01MUS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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AN-900-008
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
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RD06HVF1
Abstract: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026 Date : 22th Nov. 2004 Prepared : K.Inaba Confirmed : S.Kametani SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz SUMMARY: This application note shows the RF characteristics data for 135MHz-175MHz
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AN-VHF-026
RD06HVF1
135-175MHz
135MHz-175MHz
RD06HVF1
135MHz
175MHz:
220uf/25V
mitsubishi rf
rf amplifier broad band
175mhz
220uF, 25V
MITSUBISHI APPLICATION NOTE RF POWER
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RD01MUS2
Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency
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AN-UHF-085
RD01MUS2
RD07MVS1B
RD01MUS2:
RD07MVS1B:
068YD"
400-470MHz
RPC03
RPC05
RD01MUS2
rpc03
grm188r11h
taiyo
RPC03 micro electronics
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RA60H1317M1
Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series
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AN-GEN-026-E
AN-GEN-026-E
RA30H4452M
440-520MHz,
200pF,
RA60H1317M1
FET 4900
mitsubishi rf
"RF Power Modules"
175mhz 12.5v 40w
RA30H1317M
RA13H1317M
RA03M8087M
RA30H4452M
RA35H1516M
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RD01MUS1
Abstract: RD07MVS1 848/b+5891
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency
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AN-VHF-013Date
RD01MUS1
RD07MVS1
RD01MUS1:
2K291"
RD07MVS1:
031AA"
135-175MHz
RD01MUS1
848/b+5891
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shinetsu G746 rohs
Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:
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AN-GEN-006-D
shinetsu G746 rohs
shinetsu G746
G746
sirf iii chip
MITSUBISHI APPLICATION NOTE RF POWER
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RD01MUS1
Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.
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AN-GEN-038
RD01MUS1
RD02MUS1
RD07MVS1
RD30HVF1
RD30HUF1
100pF
/100pF
RD01MUS1
RD02MUS1
RD30HVF1
ANGEN038
1.5kohm
RD07MVS1
RD30HUF1
mitsubishi rf
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walkie-talkie
Abstract: sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-030-B Date : 16th June. 2003 Prepared : T.Kajo,T.Ohkawa Confirmed : Issue B: H.Nakao ht 27 Oct. 2003 T.Ohkawa SUBJECT: Reliability concept for SiRF Products Conclusion: products. This application note shows the reliability concept and reliability level for SiRF
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AN-GEN-030-B
AN-GEN030
490MHz
walkie-talkie
sirf 4
mitsubishi rf
sirf
sirf 3
reliability
RA30H4452M
MITSUBISHI example
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shinetsu G746
Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal
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AN-GEN-001
25deg
6x10E-3
2x10E14
150deg
shinetsu G746
G746
shinetsu
shinetsu G746 rohs
G746 shinetsu
ANGEN001
G746 rohs
thermal conductivity
shin-etsu
shin-etsu Chemical
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RA30H4047M1
Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
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AN-UHF-083B
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
mitsubishi rf
MITSUBISHI RF POWER MOS FET
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RA60H4047M1
Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.
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AN-UHF-078
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
mitsubishi bipolar rf power
mitsubishi rf
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RA45H7687M1
Abstract: mitsubishi rf sirf 1v GG13
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1
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AN-900-026
RA45H7687M1
RA45H7687M1,
RA45H7687M1
20dBm
AN-900-026
806MHz
mitsubishi rf
sirf 1v
GG13
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shinetsu G746 rohs
Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS
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AN-GEN-042-B
shinetsu G746 rohs
shinetsu G746
G746 rohs
G746 shinetsu
G746
H11S
H46S
AN-GEN-042-B
shinetsu
Dented
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mitsubishi Lot No
Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:
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AN-900-027
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
mitsubishi Lot No
AN-900-027
RA45H7687M1
MITSUBISHI APPLICATION NOTE RF POWER
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MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E
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12GHz
MGF4919E
MGF4914E
MGF49T4D
MGF4714AP
MGF4914D
MGF1923
MGF1902B
MGF2430A
MGF4919
MGF1402B
MGF2430
7.1 power amplifier circuit diagram
block diagram of power factor meter
mgf2445
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MGF7104
Abstract: MGF7103
Contextual Info: ^MITSUBISHI MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION APPLICATION M G F7100 Series are m onolithic m icrow ave integrated circuits for use in 900M H z band # RF output stage of H andheld phone am plifiers. Note: This is not a final specification.
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MGF7100
900MHz
F7100
NMT-900
MGF7103
MGF7104
MGF7105
200mA,
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