MIR 800 Search Results

microwave distance sensors

Abstract: MIR-800 mir 800 8097 instruction set Gems Sensors radar sensor metal detector probe sensor radar distance sensor radar block diagram
Contextual Info: Instruction Bulletin No. 203788 Rev. C MIR-800 Micropower Impulse Radar Continuous Level Transmitter Thank you for purchasing the Gems MIR Continuous Level Transmitter. Please read and fully understand this document prior to installing the MIR Transmitter and store it where it may be readily available for familiarization

MIR-3305-P

Abstract: MIR-3301
Contextual Info: SUBMINIATURE PHOTOINTERRUPTER MIR-3305-P Description Package Dimensions Unit: mm The MIR-3305-P consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.

MIR-3301

Abstract: MIR-3301-P
Contextual Info: SUBMINIATURE PHOTOINTERRUPTER Description MIR-3301-P Package Dimensions The MIR-3301-P consists of a Gallium Arsenide in- Unit: mm frared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.

MIR-3301

Abstract: MIR-3305
Contextual Info: SUBMINIATURE PHOTOINTERRUPTER Description MIR-3305 Package Dimensions Unit: mm The MIR-3305 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.

IC AL 6001

Abstract: al 13003 3306 opto 1010 107D MIR-3306-TC11 phototransistor 940nm
Contextual Info: SMD Type Reflective Photo Sensor Subminiature Photointerrupter Description MIR-3306-TC11 Package Dimensions Unit: mm The MIR-3306-TC11 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.

IC AL 6001

Abstract: 107D MIR-3307-TC11 reflective photo sensor
Contextual Info: SMD Type Reflective Photo Sensor Subminiature Photointerrupter Description MIR-3307-TC11 Package Dimensions Unit: mm The MIR-3307-TC11 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.

zener barrier

Abstract: Gems Sensors 202530 MIR-800 wave guide radar sensor Types of Radar Antenna radar level sensor MIR-900
Contextual Info: MIR-900 Series – Flexible Dual Rod  Highly Repeatable  Lengths to 12 Feet  Tefzel  Ideal Wave Guide Encapsulation for Coating/Viscous Liquids MIR-900 Series sensors handle tank depths to 12 feet, but more important for some will be the ability of this series to deliver

Contextual Info: TFBS5700 Vishay Semiconductors Fast Infrared Transceiver Module MIR, 1.152 Mbit/s for IrDA and Remote Control Applications Description The TFBS5700 is a low profile infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and carrier based remote control modes up to 2 MHz. The

EN60825-1

Abstract: IEC60825-1 TFBS5700 TFBS5700-TR3
Contextual Info: TFBS5700 Vishay Semiconductors Fast Infrared Transceiver Module MIR, 1.152 Mbit/s for IrDA and Remote Control Applications Description The TFBS5700 is a low profile infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and carrier based remote control modes up to 2 MHz. The

TFBS5700

Abstract: EN60825-1 IEC60825-1 TFBS5700-TR3
Contextual Info: TFBS5700 Vishay Semiconductors Fast Infrared Transceiver Module MIR, 1.152 Mbit/s for IrDA and Remote Control Applications Description The TFBS5700 is a low profile infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and carrier based remote control modes up to 2 MHz. The

mir3301

Abstract: MIR-3301
Contextual Info: SUBMINIATURE PHOTOINTERRUPTER MIR-3301 Description Package Dimensions sistor built in a black plastic housing. It is a reflective subminiature photointerrupter. 3.4±0.2 1.80 A D B Unit: mm Detector center frared emitting diode and a NPN silicon phototran-

350542-1

Abstract: 062 JRC 070-003 1-480722-0 350540-1 350426-2 350425-2
Contextual Info: Specifications subject to change. Commercial MATE-N-LOK Connectors Continued Free-Hanging Connectors Material: 94V-2 Nylon, natural color 01 5 unless z. 1-800-522-6752 2,3 and 4 Circuit Positive Lock Socket Housings 1 c m in a i moo i»\inno miR i i i ~i

omnivision 16bit Sccb

Abstract: omnivision ov8610 omnivision OV7630 G1824 OV8610 SCCB OmniVision Technologies omnivision Sccb b615
Contextual Info: Omni ision Advanced Information Preliminary Datasheet TM OV8610 Color CMOS SVGA 800 x 600 CAMERACHIPTM Applications Version 2.3, April 8, 2003 UV7/B8 22 UV6/ TVEN 23 UV5/MIR UV0/ GAM MA UV1/ CC656 UV2/ QSVGA UV3/ ECLK0 UV4/ SLAEN 24 21 20 19 HREF/ VFLIP

IR fiber

Abstract: Oriel Instruments
Contextual Info: INFRARED FIBERS TRANSMITTANCE % 100 75 50 25 1 3 2 4 5 WAVELENGTH (µm) 77690 Fiber coupled to 80040 Fiber Optic Adapter on MIR 8000 Fourier Spectrometer. Fig. 1 Transmittance of 77690 IR Fiber. • ■ ■ FOR OTHER SIZES. Excellent transmittance from 600 nm to 4.5 µm

AN-1114

Abstract: AN1114 EIA-541 FDC37C669 FDC37N769 HSDL-3211 HSDL-3211-021 RH 321.1
Contextual Info: Agilent HSDL-3211 IrDA Data Compliant Low Power 1.15 Mbit/s Infrared Transceiver Data Sheet Features • Fully compliant to IrDA 1.4 physical layer low power specification from from 9.6 kbit/s to 1.152 Mbit/s MIR • Miniature package – Height: 2.5 mm

infrared manual

Abstract: infrared receiver led 2 pin pulse position modulation demodulation rc-6 protocol SERVICE MANUAL tv sharp PC87108AVHG
Contextual Info: Semiconductor PRELIMINARY March 1997 PC87108AVHG Advanced UART and Infrared Controller Features • Fully com patible w ith 16550 and 16450 devices ■ E xtended U A R T mode UART, Sharp-IR, IrDA 1.0 SIR, IrDA 1.1 MIR and FIR, and C onsum er-IR also referred to as T V Rem ote or C onsum er

434SY

Abstract: hb5d-434sy-c HB5d-435AOR-C hb5d-435sor-d
Contextual Info: Extra Bright LEDs Lamps For Traffic Signal Use. IF=20mA Ta=25°C Color Wavelength nm Device No VF Brightness (mcd) Typical Emitter Lens Xp Angle IV1 Xd IV2 (V) 4.1:±:0.2 View 291/2 25.4 Min 1.0 mir cathode JL_ yi_ T O .7 max Max 1.0 ( 1 .0 ) - iq c

KV1235Z

Abstract: KV1235 KV1226 KV1230Z HVU354 kv1236 420C 420F HVU307 HVU316
Contextual Info: -191 fi £ tt P « mir -K £ Ct (Vl)/Ct (V2) fe Vr m Vr (V) (V) miz Ct , C j* (p F) m in typ max fdinax Qm in V r (V) min max typ \~2 1 12. 0 12. 5 25 V1(V) V2 (V) - ft iRjnax B (fi) V r (V) f (MHz) (uh) V r (V) HVU3 07 0 Ä Tun 30 32, 2 2. 57 Ihì 2 25

KV1226

Abstract: KV1235 KV1235Z KV1236 KV1230Z 420C 420F HVU307 HVU316 HVU350
Contextual Info: -191 fi -K £ fe £ tt P « mir Vr m Vr (V) (V) Ct (Vl)/Ct (V2) miz Ct , C j* (p F) m in typ max fdinax Qm in V r (V) min max typ \~2 1 12. 0 12. 5 25 V1(V) V2 (V) - ft iRjnax B (fi) V r (V) f (MHz) (uh) V r (V) HVU3 07 0 Ä Tun 30 32, 2 2. 57 Ihì 2 25

EL2244CS

Abstract: 734 coaxial cable data EL2244CN el2244cs opamp Dp 104 408C AD827 EL2244C
Contextual Info: élantec Mir.- " r , r n < V ance. m , a _c 'j .s t e r p e ,: c nej : ' s EL2244C/ÉL2444C D unl/Q uad Lnw-Potcer SO MHz Unity-Vain Stable O p A m p M f U> to rf». n H F eatu re s G e n e ra l D escrip tio n • 60 M H z g a in -b a n d w id th p ro d u c t

KV1236

Abstract: KV1235 KV1235Z KV1226 HVU352 KV1230Z KV1250 HVU354 420C 420F
Contextual Info: -191 fi £ tt P « mir -K £ Ct (Vl)/Ct (V2) fe Vr m Vr (V) (V) fdinax ft m iz Ct , C j* (p F) m in typ Qm in max V r (V) min max typ \~2 1 12. 0 12. 5 25 V1(V) V2 (V) - iRjnax B (fi) V r (V) f (MHz) (uh) V r (V) HVU3 07 0 Ä Tun 30 32, 2 2. 57 Ih ì 2 25

KV1235Z

Abstract: KV1226 KV1236 KV1230Z KV1235 420C 420F HVU307 HVU316 HVU351
Contextual Info: -191 fi -K £ fe £ tt P « mir Vr m Vr (V) (V) m in typ Ct (Vl)/Ct (V2) m iz Ct , C j* (p F) max fdinax Qm in V r (V) min max typ \~2 12. 0 12. 5 25 Ih ì 1 V1(V) V2 (V) - ft iRjnax B (fi) V r (V) f (MHz) (uh) V r (V) HVU3 07 0 Ä Tun 30 32, 2 2. 57 2 25

transistor kp 303

Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
Contextual Info: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie

SBF3

Abstract: 2 SD 8550 tdr4 MSM9405 MSM9405MB SSOP30-P-56-0 TCC11
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.