MINIBLOC M4X8 Search Results

Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

75n60

Abstract: M4x8 UPS SIEMENS C160 ID100
Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

DMA150YA1600NA

Abstract: DMA150YC1600NA
Contextual Info: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline

DMA150YA1600NA

Abstract: DMA150YC1600NA
Contextual Info: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline

DMA150E1600NA

Contextual Info: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated

din 7985 B

Abstract: SCREW din 7985 din 7985
Contextual Info: DSEI 2x 60-04C Fast Recovery Epitaxial Diode FRED IFAVM = 2x 60 A VRRM = 400 V trr = 35 ns 2 VRSM VRRM V V 440 400 1 miniBLOC, SOT-227 B Type DSEI2x60-04C 3 4 E72873 Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM

DSA300I200NA

Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
Contextual Info: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:

DMA150YA1600NA

Abstract: dma150 marking YC DIN7985 DMA150YC1600NA
Contextual Info: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1 DMA 150 YC 1600 NA 3 1600 V 150 A 1.12 V 2 4 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DMA150YA1600NA

Abstract: marking code YA DMA150YC1600NA
Contextual Info: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1 DMA 150 YA 1600 NA 3 1600 V 150 A 1.12 V 2 4 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DHG5

Abstract: din 7985 DHG50X1200 DHG50X1200NA
Contextual Info: DHG 50 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 25 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 50 X 1200 NA Backside: Isolated Features / Advantages: Applications:

DHG100X1200NA

Abstract: SCREW din 7985
Contextual Info: DHG 100 X 1200 NA advanced V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:

DHG100X1200NA

Abstract: sot 227b diode fast din 7985 DHG10
Contextual Info: DHG 100 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:

DH2x60-18A

Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Contextual Info: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:

DMA150E1600NA

Abstract: DMA-150 DIN7985 din 7985
Contextual Info: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number DMA 150 E 1600 NA 1 3 2 4 Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

IXA60IF1200NA

Abstract: din 7985
Contextual Info: IXA60IF1200NA preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 84 A 1200 V 1.8 V C (2) Part number IXA60IF1200NA (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

IXA60IF1200

Contextual Info: IXA60IF1200NA I C25 = = VCES VCE sat typ = XPT IGBT Copack 88 A 1200 V 1.8 V C (3) Part number (G) 2 E (1+4) Features / Advantages: Applications: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through)

IXA60IF1200NA

Abstract: marking code C4 Sot 23-5 din 7985 SCREW din 7985 ixa60if1200 60if1200
Contextual Info: IXA60IF1200NA I C25 = = VCES VCE sat typ = XPT IGBT Copack 88 A 1200 V 1.8 V C (3) Part number IXA60IF1200NA (G) 2 E (1+4) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

Contextual Info: DSEP2x25-12C V RRM = 1200 V I FAV = 2x 25 A t rr = 15 ns HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Parallel legs with series connected dice Part number DSEP2x25-12C Backside: isolated Features / Advantages:

CLA100PD1200NA

Contextual Info: CLA 100 PD 1200 NA advanced V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Phase leg Part number 4 3 1 1200 V 100 A 157 A 2 Backside: isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability