MIL STD 833 D Search Results

44C256B

Abstract: 44C256
Contextual Info: SMJ44C256 262144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C - MAY 1989 - REVISED JUNE 1995 ! Organization . . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: * • 3-State Unlatched Output

44c256

Abstract: 3034C
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output

Contextual Info: HV570 P relim ina ry 64-Channel Serial To Parallel Converter With P-Channel Open Drain Controllable Output Current Ordering Information Package Options Device 80-Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-Std-833 Processed*

Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SlfTÌTEH DESCRIPTION FEATURES 35, 45 and 55ns Access Times 15, 20 and 25ns Output Enable Access Unlimited Read and W rite to SRAM Hardware STORE Initiation

440-256

Abstract: 44C256-10
Contextual Info: SMJ44C256 262144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C - MAY 1989 - REVISED JUNE 1995 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output Low Power Dissipation

STK10C68

Abstract: STK10C68-M qa1 smd
Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SlfTÌTEH DESCRIPTION FEATURES 35, 45 and 55ns Access Times 15, 20 and 25ns Output Enable Access Unlimited Read and W rite to SRAM Hardware STORE Initiation

Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SimTEH FEATURES DESCRIPTION 3 0,3 5,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing

s8015

Contextual Info: SMJ44C256 2 62 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034A-MAY 1989-flEVISED FEBRUARY 1993 3-State Unlatched Output * - 55°C to 125°C Operating Free-Air Temperature Range Low Power Dissipation * Processed to MIL-STD-833, Class B Texas Instruments EPIC CMOS Process

stk 412 -420

Abstract: STK 419 - 150 STK 419 150 ic stk 412 -420 stk 412 420 STK 412 150 M STK 419- 150 20 pins ic stk 412 -420 m STK 412 150 M function stk 412 150
Contextual Info: STK10C68-M SlfïlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 35,45 and 55ns Access Times 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing

382e

Contextual Info: STK10C68-M SimTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 30,35, 45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing

SMJ44C256

Abstract: 44C256 44c25680 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 SMJ44C256-80 44C256-80 44c256-12 44C256-10
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C – MAY 1989 – REVISED JUNE 1995 D D D D D D D D D D Organization . . . 262 144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: SMJ44C256-80

Contextual Info: SN74CBT16212A 24-BIT FET BUS-EXCHANGE SWITCH SCDS0Q7K - NOVEMBER 1992 - REVISED MARCH 1998 5-Q Switch Connection Between Two Ports TTL-Compatible Input Levels Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-833, Method 3015; Exceeds 200 V

s037a

Abstract: h58n
Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037B-JANUARY1991-REVISED FEBRUARY 1993 JD PACKAGE TOP VIEW • I * Military Operating Temperature Range . . . - 55°C to 125°C I * Processed to MIL-STD-833, Class B I • DRAM: 262 144 Words x 4 Bits SAM: 512 Words x 4 Bits

Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SimTEH FEATURES DESCRIPTION • 35,45 and 55ns Access Times • 20 and 25ns Output Enable Access The Simtek STK10C68-M is a fast static RAM 35, 45 and S5ns , with a nonvolatile electr'cally-erasable PROM

Contextual Info: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss

NBXSPA008LN1TAG

Abstract: NBXSPA008LNHTAG
Contextual Info: NBXSPA008 2.5 V / 3.3 V, 161.1328 MHz LVDS Clock Oscillator The NBXSPA008 single frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide

NBXDPA018LN1TAG

Abstract: NBXDPA018LNHTAG
Contextual Info: NBXDPA018 2.5 V / 3.3 V, 155.52 MHz / 311.04 MHz LVDS Clock Oscillator The NBXDPA018 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental

NBXDPA012LN1TAG

Abstract: NBXDPA012LNHTAG
Contextual Info: NBXDPA012 2.5 V / 3.3 V, 106.25 MHz / 212.5 MHz LVDS Clock Oscillator The NBXDPA012 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental

smd 6x

Abstract: NBXDPA019LN1TAG NBXDPA019LNHTAG
Contextual Info: NBXDPA019 2.5 V / 3.3 V, 125 MHz / 250 MHz LVDS Clock Oscillator The NBXDPA019 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental

48 pin clcc footprint

Abstract: MIL-STD-833 NBXDPA017LNHTAG NBXDPA017LN1TAG NBXDPA017LUHTAG CLCC-48 footprint
Contextual Info: NBXDPA017 2.5 V / 3.3 V, 156.25 MHz / 312.5 MHz LVDS Clock Oscillator The NBXDPA017 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental

Contextual Info: NBXSBA051 2.5/3.3 V, 533.33 MHz LVPECL Clock Oscillator The NBXSBA051, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5/3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 533.33 MHz, ultra

Contextual Info: NBXSBA045 2.5/3.3 V, 345.00 MHz LVPECL Clock Oscillator The NBXSBA045, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5/3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 345.00 MHz, ultra

Contextual Info: NBXSBA030 2.5 V / 3.3 V, 175.00 MHz LVPECL Clock Oscillator The NBXSBA030, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5 V / 3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide

NBXSBA010LN1TAG

Abstract: NBXSBA010LNHTAG
Contextual Info: NBXSBA010 3.3 V, 100 MHz LVPECL Clock Oscillator The NBXSBA010, single frequency, crystal oscillator XO is designed to meet today’s requirements for 3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 100 MHz, ultra low