MIF 7 Search Results

Mbs-1330-33

Abstract: MIF-1206-33 MXB-1210-33 MBS 14 1206 0.22 ohm MAS-1220-33 MXB-1206-33 MXB-1220-33 mif-1206 MIF-1203-33
Contextual Info: Part IV—Accessories LAMBDA'S EMI FILTERS EMI FILTERS RATINGS TABLE MODEL MAS-1206-33 MAS-1210-33 MAS-1215-33 MAS-1220-33 TERMINAL TYPE Lug Lug Lug Lug MIF-1201-33 Ml F-1202-33 MIF-1203-33 MIF-1206-33 DC OHMS max MAX CURRENT (AMPS) AT AMBIENT TEMPERATURE OF

B708

Abstract: diodi
Contextual Info: 8020 HALF-WAVE HIGH-VACUUM RECTIFIER DATA Electrical: Filament, Thoriated Tungsten: Voltage. 5 volt* Current. 5 * 5 - 6 . 5 . asp Direct Interelectrode Capacitance; mif Anode to Filament . . . 1 * 4 .

Contextual Info: LC Modules MULTILAYER CHIP IFTS, MIA AND MIF SERIES FEATURES • Closed magnetic circuit configuration eliminates cross coupling. Suitable for high density applications. • Monolithic inorganic material construction for high reliability. PC BOARD PATTERNS

BU 508 AF

Abstract: RADIOTRON ST-14 Scans-0017344
Contextual Info: tuptrnding Hadiatron ILS-0 M t SAeet fcwW Nor»mk*r. »MO RADIOTRON 115-C POWER AMPLIFIER PENTODE Filament Coated volts Voltage 8.0 amp* Current 0.24 Direct Intereleetrod« Capacitance* Pentode Connection:1.0 miF. Grid to Plate 8.0 inii*. Input Output _ 11.0

tdk marking code

Abstract: TDK EL
Contextual Info: Multilayer Chip IFTs MIA and MIF Series FEATURES PRODUCT IDENTIFICATIONS MIA 3225 AR455 O □ □ □ • Shielded construction to minimize crosstalk in density mounting applications. • Adjustment free IFTs are well suited for high volume automated assembly.

yagi-uda Antenna

Abstract: TF 100 FEMA FB35T900 FB35T BSA150C
Contextual Info: Base Station Antennas BRIEF REVIEW OF OMNI DIRECTIONAL ANTENNAS GeiiliïâÇ PCS, Data, ISIV^ WLL^ are ali •tecènoiogi^mifÄ g - to- confletdy ■■■■ ofthese' Omni-directional antennas have radiation ■new wireless systems requires a . FB SERIES OMNIS

Contextual Info: Who mifíM1 HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package

8g75

Abstract: DECT telePhone
Contextual Info: mifíMt HP AE CWKLAERT DT fí a IF Modulator/Demodulator IC Technical Data HPMX-5002 Features Plastic TQFP-48 Package • Use with HPMX-5001 Up/Down Converter Chip for DECT Telephone Applications • 2 .7 -5 .5 V Single Supply Voltage • >75 dB RSSI Range

Contextual Info: 975-/ AC3<:=:2BC@6 5:? @6;2F 7JGUVSJT ] ] ] ] ] 9 Hilg E ]ih`caol[ncih Jcab mqcn]bcha ][j[]cnsA 89<WC6=7X N[n]bcha 8= jch KE mi]e_n Dc`ol][n_^ ]ihn[]nm Gjirs m_[f_^ `il [onig[nc]4q[p_ mif^_lcha [h^ ]f_[hcha ] Ghpclihg_hn[f `lc_h^fs jli^o]n 0SiJT ]igjfc[hn1

Contextual Info: Thn% L ET T mifíM HP AEW CKARD SnapLED LEDs HP SunPower Series HPWT-SHOO HPWT-PHOO HPWT-SLOO HPWT-PLOO Technical Data B enefits • Fewer LEDs Required • Lower Total System Cost • Mounted on Formable Substrate Which Enables 3-Dimensional Applications

Contextual Info: MIF Vishay Electro-Films Thin Film Microwave Resistor FEATURES MICROWAVE RESISTORS Product may not be to scale • Small single chip size: 0.016 x 0.020 inches • Microwave resistance range: 20 Ω to 100 Ω • Overall resistance range: 20 Ω to 2 kΩ • Alumina substrate

CHN 647

Abstract: CHN 849
Contextual Info: ;9=4/;9=4.E 4FEA?AE<G8 C8>4I 9NKYZWNX + 8;B ginil fi]e_^ fi[^ + Frnl_g_fs mg[ff l_f[s + Db[ha_3ip_l ]ihn[]n p_lmcih Schaf_ + Schaf_ [h^ nqch p_lmcih [p[cf[\f_ Tqch + Dicf qcl_ chmof[ncih ]f[mm I /7>6 0 E]VPLKR 4VVRPLKYPUTX + IGKB3T /l_`fiq mif^_lcha p_lmcih0 [p[cf[\f_

Contextual Info: 975-/ AC3<:=:2BC@6 5:? @6;2G 7KHVWTKU ^ ^ ^ ^ ^ 9 Hilg E ]ih`caol[ncih Jcab mqcn]bcha ][j[]cnsA 89<WC6=7X N[n]bcha 8= jch KE mi]e_n Dc`ol][n_^ ]ihn[]nm Gjirs m_[f_^ `il [onig[nc]4q[p_ mif^_lcha [h^ ]f_[hcha ^ Ghpclihg_hn[f `lc_h^fs jli^o]n 0SiJT ]igjfc[hn1

10.7MHz, shielded IF transformer

Contextual Info: Multilayer Chip IFTs MIA and MIF Series TDK has produced the world’s smallest Chip IFT. This adjustment free monolithic circuit is packaged in 3225 3.2L x 2.5W mm [.126 x .098 inches] size. The internal capacitor and transformer are multilayered and cofired resulting in high reliability parts.

CHN 849

Abstract: m649 chn 940 1J37
Contextual Info: ;9=40;9=4/E 4FEA?AE<G8 C8>4I 9NKYZWNX , 8;B ginil fi]e_^ fi[^ , Frnl_g_fs mg[ff l_f[s , Schaf_ [h^ nqch p_lmcih [p[cf[\f_ Schaf_ Tqch , Dicf qcl_ chmof[ncih ]f[mm I /7>6 0 , IGKB3T /l_`fiq mif^_lcha p_lmcih0 [p[cf[\f_ E]VPLKR 4VVRPLKYPUTX , RiIS - FLV ]igjfc[hn

MBS-1210-22

Abstract: MBS-1220-22 MIF-1203-22 Lambda LU MIF-1206-22 Lf lambda MBW-1203-22 1203-22 mif-1206 MIF-1203
Contextual Info: PART IV—ACCESSORIES if series une filte rs mm ATTÉNUÂT«» Lambda's compact, lightweight MBW, MBS and MIF Series filters are designed to achieve optimal attenuation with Lambda's LF, LS, LU, LY and LJA Series of switching power supplies. Built in accordance with VDE safety regulations they have been

EF55

Abstract: iso 4 Sharp 45 pentode MUTUAL
Contextual Info: EF55 VIDEO FREQUEN CY PENTODE Single-ended R.F. pentode with very high mutual conductance and sharp cut-off. HEATER Vh Ih 6.3 1.0 V A CAPACITANCES c out cln oa.gl miF 15 0.15 wiF OPERATING CONDITIONS h • B f ëm ï f ei LIMITING VALUES 250 250 -4.5 40 5.5

IR LED 810 nm 5mm

Contextual Info: Whp%H E W LE T T mifÍMP A C K A R D 2 mm x 5 mm Rectangular AlInGaP Lamps Technical Data HLMA-SX05 Series Features • Rectangular Light Emitting Surface • Excellent for Flush Mounting on Panels • Choice of Two Colors Amber and ReddishOrange • Long Life: Solid State

Contextual Info: What H E W LE T T « mifíM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 F eatu res D escription • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable

Contextual Info: What H E W L E T T mifÍM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0370 Features D escription • Cascadable 50 Q Gain Block The MSA-0370 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high

Contextual Info: What HEWLETT« mifíM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0600 F eatures • Cascadable 50 Q Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB Typical at 0.5 GHz

chn 947

Abstract: BAOC v647 DRD68667667 F799 CHN 845 CHN 848
Contextual Info: 31/~* /KSD38=G0 ;=-6474,<=:0 /49 :05,@ 1DAOPMDN X X X X X 8 Gilg D ]ih`caol[ncih Icab mqcn]bcha ][j[]cns@78;WB5<6X N[n]bcha 7< jch JD mi]e_n Cc`ol][n_^ ]ihn[]nm Fjirs m_[f_^ `il [onig[nc]3q[p_ mif^_lcha [h^ ]f_[hcha X Fhpclihg_hn[f `lc_h^fs jli^o]n /SiIT ]igjfc[hn0

CHN 747

Abstract: CHN 749 CHN 647 CHN 648 .7E2 ksp66 RM37 rm38
Contextual Info: :8<5+:8<5*D 3ED@>@D;F7 B7=3H 8MJWXUMV ` So\gch[nol_ [onigincp_ l_f[s ` N[rcgog ]ihnchoiom ]oll_hn 96C Schaf_ ` Tqch m_j[l[n_ msmn_gm /Tqch p_lmcih0 Tqch ` Tb_ l_`fiq mif^_lcha V_lmcih /ij_h p_hn bif_0 [p[cf[\f_ /JHLE3T0 D[TOKJP 3TTPOKJWOSRV E_hnl[f ^iil fi]e2 Wcj_l ]ihnlif2 Kh^c][nil ]ihnlif2 Qiq_l ^iil

ES34

Abstract: JI03 diode RAA 0.8 diode EB EB34 VADI
Contextual Info: EB34 D O U BLE DIODE Double diode with separate cathodes. Each section is internally screened. HEATER This valve is s u ita b le fo r DC/AC op eration . Vh 6 .3 0 .2 A Cad'-k cad "-k Ofid'-ad" 4 .5 4 .5 0 .5 wiF |i iF miF Iji V CAPACITANCES a j' a j LIMITINO VALUES