MICROWAVE SWITCH TECHNOLOGY: PART 2 Search Results

Microwave Switch Technology: Part 2

Contextual Info: PAGE 34 • JUNE 2009 FEATURE ARTICLE www.mpdigest.com Solid State RF/Microwave Switch Technology: Part 2 by Rick Cory and Dave Fryklund, Skyworks Solutions, Inc. Introduction n part 1 we discussed an overview of RF/microwave switch topologies, PIN diode theory of operation, and

Microwave oscillator

Abstract: microwave
Contextual Info: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description

FMCW

Contextual Info: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description

Contextual Info: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description

HMCAD1512

Contextual Info: OFF-THE-SHELF March 2013 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Follow Us Live at OFC/NFOEC on Twitter @HittiteMWCorp See Page 2 for Details. 14 New Featured Products! 8-Bit 450/900 MSPS A/D Converter New Product Line Signal Conditioners for Fiber Optics

BTS antenna structure

Abstract: hmc192 HMC18214 hittite cross HMC187MS8 HMC165S14 HMC172QS24 HMC173MS8 HMC175MS8 HMC183QS24
Contextual Info: MICROWAVE CORPORATION GaAs MMICs FOR CHANGING BASESTATION REQUIREMENTS FEBRUARY 2000 GAAS MMICS FOR CHANGING BASE STATION REQUIREMENTS oday wireless infrastructure designers are being faced with increasingly challenging requirements. Cellular base transceiver stations BTS , or base station, are becoming smaller,

Contextual Info: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W  Series resistance as low as 0.25 Ω  Carrier lifetime greater than 2.5 µs

Contextual Info: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling

UM2102

Abstract: UM2100 UM2101 UM2104 UM2106 UM2108 UM2110
Contextual Info: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band 2-30MHz and below. As series configured switches, these long lifetime (25 s typical) diodes

sp8t rf switch

Abstract: HMC241 HMC241QS16 HMC182S14 mesfet lnb HMC165S14 HMC252QS24 HMC253QS24 PLCC28 QSOP16
Contextual Info: MICROWAVE CORPORATION POSITIVE BIAS MULTI-THROW SWITCHES w/INTEGRATED DECODERS FEBRUARY 2001 POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Contextual Info: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE

LD79A02K

Abstract: NEC RF Switch 1998 NEC RF Switch
Contextual Info: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

cordless phone Transceiver IC

Abstract: DECT RF Transceiver 1.9 ghz LNA 2.4GHZ bluetooth Saw filter wlan 2.4Ghz LMX3162 DECT transceiver 2.4 cordless phone Transceiver IC dect module 24GHz amplifier RF 2.4Ghz antenna
Contextual Info: N LMX3162: Enabling 2.4GHz Applications February 23, 1999 1 Agenda • The news: LMX3162 • National and wireless • The 2.4GHz opportunity – Data, WLAN and the emerging home networking market – Traditional “cordless” applications • LMX3162 2.4GHz transceiver

HMC676LC3C

Contextual Info: OFF-THE-SHELF MARCH 2008 New DC to Millimeterwave ICs & Modules from Hittite Hittite Opens New Sales Office in Japan! See Page 7 25 New Products Produc Released! Product P d t Showcase Sh 0.2 - 4 GHz High IP3 Amp HIGH SPEED DIGITAL LOGIC & LATCHED COMPARATORS RELEASED!

X-band antenna

Abstract: L0408-67 Logarithmic Amplifier nf transistor array x-Band High Power Amplifier L0204-70 L0208-65 PA010020-33
Contextual Info: From Aeroflex Plainview: A passion for performance. Space-qualified RF switches Broadband microwave power amplifiers Low-phase noise amplifiers and multipliers Highly-integrated microwave assemblies RF and Microwave Products Advancing microwave technology through innovative

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads

Contextual Info: OFF-THE-SHELF February 2012 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Hittite Exhibiting at OFC 2012! View Hittite’s expanded product offerings at OFC in Los Angeles, CA, March 6 to 8, 2012. Booth #2050 30 New Featured Products!

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna

A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

Contextual Info: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V2 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 13 W CW Power, +85°C Die with G-S-G RF Pads and DC Bias Pads

COBRA RF

Abstract: GaN amplifier microwave transceiver applications of vlsi in antennas mmic A pittman radar match filter design Types of Radar Antenna 1000X front-end radar
Contextual Info: THE ROAD FROM RFIC TO SOC T wenty years ago, the microwave semiconductor industry in the US and subsequently all over the world got a boost from the Defense Advanced Research Procurement Activity, DARPA’s $600 M MIMIC Microwave and Millimeter-wave Monolithic