MICROWAVE PANASONIC Search Results

12V 40W Fluorescent Lamp Driver circuit Diagram

Abstract: SCR induction furnace circuit diagram RELAY PCB DPDT 2c SCR based induction furnace circuit diagram diagram of high frequency pvc welding machine schematic diagram induction furnace rf tube sealer schematic diagram induction heater 555 timer 12v relay scr speed control dc motor using ujt and scr
Contextual Info: Automation Controls Group Catalog Microwave Devices 2008-2009 Automation Controls Group Catalog panasonic-electric-works.net/ac Microwave Devices 2008-2009 Please contact . Automation Controls Business Unit Head Office: 1048, Kadoma, Kadoma-shi, Osaka 571-8686, Japan

Microwave Oven Inverter Control IC

Abstract: microwave inverter panasonic panasonic inverter microwave Microwave Oven Panasonic AN6718N inverter control ic microwave oven inverter AN6718 panasonic microwave inverter DD13BS2
Contextual Info: Panasonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.

SiCr

Abstract: SMD 100 6n cap ceramic pin grid array package wire bond AVX 9151 high current pogo pin 400nF 300V avx 0201 CX-101F CX-2520SB KT21
Contextual Info: IMAGINATION. CREATION. INNOVATION. AVX RF/Microwave Short Form RF Microwave Products Application Guide APPLICATIONS PRODUCTS System Frequency High Directivity Couplers 0402, 0603 Couplers (0603, 0805) 3dB Couplers KNA Filter Low Pass Filter 0805 Low Pass Filter 0603

Microwave Oven Inverter Control IC

Contextual Info: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.

Contextual Info: Panasonic • Points to be noted when ordering When placing an oorder, please specify the following: 1. Working voltage 2. Capacitance value 3. Capacitance tolerance 4. Application products: fluorescent lamp, mercury lamp, motor, electromagnetic cooker, microwave

HMC463LP4

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK V00.0408 PRODUCT APPLICATION NOTE Design and Implementation of a Bias Sequencing Circuit

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000MHz to 2800MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  Microwave Radio  High-linearity Power Control GND GND

RK1-5V

Contextual Info: RK 1.5 GHz MICROWAVE RELAYS RK RELAYS FEATURES TYPICAL APPLICATIONS 1. Excellent high frequency characteristics • Audio visual equipment Broadcast satellite tuners VCRs, CATVs, TVs • Communication equipment Automobile telephones, maritime telephones, emergency and disaster

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000MHz to 2800MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  Microwave Radio  High-linearity Power Control GND GND

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  Microwave Radio  High-linearity Power Control GND GND

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  Microwave Radio  High-linearity Power Control GND GND

RK1-5V

Abstract: CATVs TH10 RK1-12V RK1-24V RK1-L-12V RK1-L2-12V RK1-L2-24V RK1-L-24V RK1R-12V
Contextual Info: RK 1.5 GHz MICROWAVE RELAYS 20.2 .795 11.2 .441 9.7 .382 RK RELAYS FEATURES TYPICAL APPLICATIONS 1.Excellent high frequency characteristics • Audio visual equipment Broadcast satellite tuners VCRs, CATVs, TVs • Communication equipment Automobile telephones, maritime

Contextual Info: RE ARE 2.6 GHz SMALL MICROWAVE RELAYS RE RELAYS (ARE) FEATURES TYPICAL APPLICATIONS • Excellent high frequency characteristics (to 2.6GHz) 1. Broadcasting and video markets. • Digital broadcasting market • STB/tuner market, etc. 2. Communications market

EEsof Circuit Components for Manual for ADS

Abstract: W2320
Contextual Info: Agilent EEsof EDA Advanced Design System The Industry’s Leading RF, Microwave and High-Speed Design Platform ADS ADVANCED DESIGN SYSTEM Powerful. Easy. Complete. Advanced Design System ADS is the world’s leading electronic design automation (EDA) software

Contextual Info: Preliminary Data Sheet Product Description The Sirenza Microdevices’ SRF-1016 is a quadrature demodulator RFIC designed for UHF and microwave receiver IF applications. This device features switchable gain control, high P1dB, and excellent I/Q amplitude and

ARJ20A4H

Contextual Info: RJ ARJ UP TO 8GHz SMALL MICROWAVE RELAYS RoHS compliant RJ RELAYS (ARJ) FEATURES TYPICAL APPLICATIONS • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB (Between open contacts)

Contextual Info: MICROWAVE CORPORATION HMC173MS8 v01.0801 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.8 - 2.0 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC173MS8 is ideal for 0.8 - 2.0 GHz Applications: Single Positive Voltage Control: 0 to +3V • Base Station Infrastructure

LOT NUMBER year HITTITE

Abstract: GaAS diode HITTITE LOT CODE
Contextual Info: MICROWAVE CORPORATION HMC173MS8 v01.0801 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.8 - 2.0 GHz ATTENUATORS - SMT 2 Typical Applications Features The HMC173MS8 is ideal for 0.8 - 2.0 GHz Applications: Single Positive Voltage Control: 0 to +3V • Base Station Infrastructure

LOT NUMBER year HITTITE

Abstract: HITTITE LOT CODE lot date code panasonic
Contextual Info: HMC173MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.8 - 2.0 GHz ATTENUATORS - SMT 2 Typical Applications Features The HMC173MS8 is ideal for 0.8 - 2.0 GHz Applications: Single Positive Voltage Control: 0 to +3V • Base Station Infrastructure

8.0 mc tdk

Contextual Info: EV-ADF4355SD1Z User Guide UG-805 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the ADF4355 Microwave Wideband Synthesizer with Integrated VCO FEATURES GENERAL DESCRIPTION

Fuse m1 250C

Abstract: SIEMENS b43471 B43991 SIEMENS b43405 B43876 B43875 m1 250c fuse B41684 epcos B43991 B43405
Contextual Info: Microwave Ceramics and Modules RF LTCC Filter for ISM 2.4 GHz Filter B69893K2457C101 Preliminary datasheet Features • Low Profile maximum height 0.9 mm Change History Revision Detail of change P1 First release Date 09.06.06 Author Stadler Contents Page 2

Contextual Info: Product Description The Sirenza Microdevices’ SRF-2016 is a quadrature demodulator RFIC designed for UHF and microwave receiver IF applications. This device features switchable gain control, high P1dB, and excellent I/Q amplitude and phase balance. SRF-2016

GN2011

Abstract: GN1017 N4003 GN2012 AGN01019B
Contextual Info: GaAs MMIC Microwave Monolithic IC # GaAs MMIC for Mobile Communication Use Block Type No. Functions Main Characteristics Applications Package No. Low noise amplifier, single positive power supply, high gain, with diversity antenna change-over switch PC,: 15dB, NF: 3dB,

metal detector plans

Abstract: AN-5378 VMMK-2x03 KE-2050 JEDEC SMT reflow profile VMMK RO4003 RO4350 KE-2050RL panasonic wafer level package
Contextual Info: Avago RF VMMK Devices Improve Performance by Reducing Parasitic Inductance and Capacitance White Paper Abstract Packaging has always significantly impacted on microwave IC and amplifier performance. In most cases, the inherent parasitic capacitance and inductance of the package lead