MICROWAVE OSCILLATOR Search Results

8r210

Abstract: srf 1714 L0402 1R5a 47056 CDR11BP gps 5350 Keithley 136 l0805 lga 1155
Contextual Info: www.avx.com AVX RF Microwave Products Version 8.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

lm 555 oscillator

Abstract: microwave motion sensor microwave sensor LM 358 opamp motion sensor doppler lm 358 lm 358 DAtasheet motion sensor doppler effect Doppler Sensor SMX-11
Contextual Info: KMY 10 Microwave Motion Sensor Description The KMY 10 is a microwave rader motion sensor based on the Doppler effect. It transmits a low energy microwave radiation at 9.35 GHz which is reflected by objects. If the object is moving relative to the sensor, a

Siemens Microwave

Abstract: KMY10 SMX-11 microwave motion sensor B129549H
Contextual Info: SIEMENS Microwave Motion Sensor KMY 10 Description The KMY 10 is a microwave rader motion sensor based on the Doppler effect. It transmits a low energy microwave radiation at 9.35 GHz which is reflected by objects. If the object is moving relative to the sensor, a

PN9255

Abstract: PN9220-00 PN9000 pn9200 PN9230 PN9240 PN9250 PN9710 phase detector 10 khz crystal oscillator 42 MHz
Contextual Info: Tommorrow’s Phase Noise Testing Today MICROWAVE OUTPUT PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DOWNCONVERTER SERIES MICROWAVE OSCILLATORS DUT INPUT 1.7 TO 18.5 GHZ DRO LOCKED -10 dBm Min TIME BASE REF LOCKED 10 MHz IN Fc TUNE PN9250 PN9255 PN9240

resonator B69500-A9107 siemens

Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Contextual Info: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active

RF TRANSISTOR NPN MICRO-X

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

sqm1150

Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.

Contextual Info: HMC219MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED MIXER 4.5 - 9 GHz FEBRUARY 1998 Midband Performance General Description LOW COST PLASTIC \ CONVERTER FOR MICROWAVE RADIOS The HMC219MS8 is an ultra miniature doublebalanced mixer in an 8 lead plastic surface

Modulators circuit diagram of a double balanced m

Abstract: BPSK MODULATORS raised cosine BPSK MODULATORS
Contextual Info: MIXERS Introducton THIRD ORDER INTERCEPT POINT The Mixer is of fundamental importance in the design of RF and Microwave Systems. It is basically used in frequency translation which in turn simplifies RF and Microwave Systems design. The selection of the proper

capacitor 0604

Abstract: HMC388LP4
Contextual Info: HMC388LP4 v01.0604 MICROWAVE CORPORATION MMIC VCO w/ BUFFER AMPLIFIER, 3.15 - 3.4 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.9 dBm • Wireless Local Loop WLL Phase Noise: -113 dBc/Hz @100 KHz • VSAT & Microwave Radio

HMC429LP4

Abstract: MMIC VCO
Contextual Info: MICROWAVE CORPORATION HMC429LP4 v01.0604 MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.0 dBm • 802.11a, HiperLAN WLAN Phase Noise: -105 dBc/Hz @100 KHz • VSAT, UNII & Microwave Radio

HMC258

Contextual Info: MICROWAVE CORPORATION HMC258 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Typical Applications Features The HMC258 is ideal for: Integrated LO Amplifier: 0dBm Drive • Microwave Pt to Pt Radios Sub-Harmonically Pumped x2 LO • VSAT High 2LO/RF Isolation: 40 dB

Contextual Info: MICROWAVE SILICON COMPONENTS Symbols SYMBOLS Cb . Case Capacitance Cj . Junction Capacitance CT . Total Capacitance CX/Cy .

SD1862

Abstract: SD1875 TCC20L15 TCC2100 SD1845 SD1876 20236
Contextual Info: s i MMiyitglTtiMOtgS ^ 7# SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RF & MICROWAVE TRANSISTORS .230 2 L F L TO 215 AA .400 MAT FL 2 . 4 GHz microwave transistors for class A operation Package Typo SD P/N TC C 2100 TCC 20 L 08 TC C 20L15 TCC 20 L 25 SD 1850

c 52250

Abstract: 52034 52228-B
Contextual Info: True Hermetically Sealed Proportionally Controlled Heater Hybrids Features: • • • Mii HYBRID MICROELECTRONICS PRODUCTS DIVISION Applications: Self-contained Programmable via a single external resistor Available from 40 to 50 watts • • • Microwave Oscillators

Contextual Info: Microwave Dielectric Resonator Oscillator BOWEI INTEGRATED CIRCUITS CO.,LTD. Features Frequency output range from 4.5GHz to 18GHz l Ceramic resonator, ultra low phase noise, high frequency stability l Buffer amplifier and isolator available to improve pulling

MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable

vco mmic

Abstract: pseudomorphic HEMT T485B T485A transistor 2xw
Contextual Info: T485B_VCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier InGaAs/AlGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

Contextual Info: CRO6835Z PHASE NOISE 1 Hz BW, typical 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com -60 Voltage-Controlled Oscillator Surface Mount Module -80 • Microwave Radios

k 1413 FET

Abstract: MGF1601B MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

MGF1801B

Abstract: Microwave power GaAs
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

10 GHz gunn diode

Abstract: Gunn Diode symbol Gunn oscillator GaAs GaAs Gunn Diode gunn oscillator wr62
Contextual Info: Varactor Controlled Oscillator 14.13 - 15.28 GHz MA87838 V3.00 Features ● ● ● ● GROUND 6.8 MICROFARAD DC CAPACITOR Small and Lightweight Low AM and FM Noise Electronic Tuning Allows Automatic Frequency Control AFC Suitable for Digital or Analog Microwave

Contextual Info: REMEC 4.7 to 6.0 GHz Voltage Controlled Oscillator Microwave Band Electrical Specifications : 1 Parameter Frequency Range Power Output at 25°C (50 Ohm load) Power Output Variation vs. Temperature Frequency Drift vs. Temperature(2) Frequency Pulling (12 dB Return Loss)

Contextual Info: REMEC 2.6 to 5.2 GHz Voltage Controlled Oscillator Microwave Band Electrical Specifications : 1 Parameter Frequency Range Power Output at 25°C (50 Ohm load) Power Output Variation vs. Temperature Frequency Drift vs. Temperature(2) Frequency Pulling (12 dB Return Loss)