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UES1102SM

Contextual Info: ISCFdÈ1^Us1^Us text/html About News Contact keyword search: UES1102SM #16636 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 100 V Max Forward Surge Current

Zener Voltage Regulator

Abstract: voltage regulator diode
Contextual Info: 1PMT5918e3/TR7 | Microsemi Quality Careers Investors Contact Us Search Parametric Search Products Applications Design Support Ordering Company Home › Products › Product Directory › Discrete Power And Small Signal Products › Zeners › Zener Voltage Regulator Diode

u3g diode

Abstract: diode 227j UM-49 Unitrode Semiconductor diode u3g
Contextual Info: MICROSEMI CORP/ WATERTOWN 5DE » • TBMTTbB 001E3T0 Tbfl ■ U N I T PIN DIODE U M 4000SERIES UM4900 S E R IE S O 7 - f 5~~ Features • • • • Power dissipation to 37.5W Voltage ratings to 1000V Series resistance rated at 0.5Q Carrier lifetim e greater than 5/us

Contextual Info: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of

Contextual Info: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of

Contextual Info: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH SMD 5962-97609* FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

Contextual Info: W764M32V1-XBX 256MB – 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

W764M32V1-XBX

Contextual Info: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when

Contextual Info: W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: W7264M32V1-XSBX W7464M32V1-XSBX *ADVANCED 512MB 2 x 64M x 32 / 1GB (4 x 64M x 32) NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W7264M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The

Contextual Info: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: W78M32VP-XBX 8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES GENERAL DESCRIPTION  Access Times of 110, 120ns The W78M32VP-XBX is a 256Mb, 3.3 volt-only Page Mode memory device.  Packaging The device offers fast page access times allowing high speed

Contextual Info: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARAN CE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss

SCR 602

Abstract: "laser range finder" SCR AUTOMOTIVE APPLICATIONS SCR TRIGGER PULSE circuit UPGA301A SCR Gate Drive Board GE power SCR datasheet GE SCR ge scr package SCR TRIGGER PULSE
Contextual Info: UPGA301Ae3 Nanosecond SCR SWITCH SCOTTSDALE DIVISION KEY FEATURES DESCRIPTION Epoxy packaged, oxide passivated planar SCR chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond connection allows high current surge capability for narrow pulse

Contextual Info: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES  Access Times of 50*, 60, 70, 90, 120, 150ns  Organized as 128Kx8  Packaging  Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

MT29C2G24MAKLA-XIT

Abstract: mt29C2G24
Contextual Info: MS29C2G24MAKLA1-XX 2Gb NAND FLASH x16 / 1Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES  Access Times of 50*, 60, 70, 90, 120, 150ns  Organized as 128Kx8  Packaging  Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

P6KE200A equivalents

Abstract: p6ke6.8 SMBJ P6KE200CA SMBGP6KE200CA SMBJP6KE200CA IEC61000-4-4 IEC610004-5 J-STD-020B MIL-PRF19500
Contextual Info: SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and SMBGP6KE6.8 thru SMBGP6KE200CA, e3 600 Watt TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE NOTE: All SMB series are equivalent to prior SMS package identifications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

UMX5601TM

Abstract: UMX5601SM UMX5601 UMX5601B
Contextual Info: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS compliant KEY FEATURES DESCRIPTION UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 J/T . The diodes are offered in axial or surface mount packages. The SM package utilizes a round end

P4KE91A

Abstract: SMAJP4KE400CA DO-204AL IEC61000-4-4 J-STD-020B MIL-PRF19500 P4KE400CA P4KE47A
Contextual Info: P4KE6.8 thru P4KE400CA, e3 400 Watt Transient Voltage Suppressor SCOTTSDALE DIVISION APPEARANCE This 400 W Transient Voltage Suppressor TVS series is an economical molded axial-leaded package to protect voltage-sensitive components from destructive or partial degradation. They are available in both unidirectional

8700 CJ

Abstract: UPS115U
Contextual Info: UPS115U SCOTTSDALE DIVISION ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 15 VOLT DESCRIPTION In addition to its size advantages, Powermite package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during

UMX4900

Abstract: UMX4000 UM4906 UM4000 UM4001 UM4002 UM4006 UM4010 UM4900 UM4900C
Contextual Info: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION KEY FEATURES ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Package Condition UM4000 D • Carrier lifetime greater than 5 µs • Non cavity design