MICROSEMI RF TRANSISTOR Search Results

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Contextual Info: SD1224 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! ! ! ! ! ! ! W W W . Microsemi .COM The SD1224 is an epitaxial silicon NPN planar transistor designed

RF power transistors 3000

Abstract: MS1078 MICROSEMI RF TRANSISTOR HF SSB APPLICATIONS RF
Contextual Info: MS1078 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W . Microsemi .COM The MS1078 is a Class AB epitaxial silicon NPN planar transistor

MSC1610

Abstract: MS1077
Contextual Info: MS1077 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W . Microsemi .COM The MS1077 is a Class AB epitaxial silicon NPN planar transistor

Contextual Info: MMBR951MLT1/MRF9511MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage

mrf571

Abstract: MRF5711MLT1 MMBR571MLT1 RF LNA 10 GHz
Contextual Info: MMBR571MLT1/MRF5711MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage

transistor military

Abstract: MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106
Contextual Info: Winter 1997-1998 Microsemi's RF Products group in Montgomeriville, PA is supplier of RF Power Transistors for use in military/ space avionics and commercial cellular base station designs. Cellular GSM Base Station Transistor Lineups Microsemi RF Products has a

NPN microwave power transistor 865

Abstract: 2SD1144 SD1144 865 RF transistor
Contextual Info: SD1144 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Common Emitter !" Collector Efficiency

SD1012-03

Abstract: Ic 346 SD1012
Contextual Info: SD1012-03 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 MHz !" 12.5 Volts !" Efficiency 50% !" Common Emitter !"

MSC1651

Contextual Info: MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS TCASE = 25°C Symbol VCBO VCES VEBO IC

RF power transistors 3000

Abstract: HF SSB APPLICATIONS
Contextual Info: MS1006 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Optimized for SSB !" 30 MHz !" 50 Volts !" Common Emitter !" Gold Metallization

HF SSB APPLICATIONS RF

Contextual Info: MS1005 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 30 MHz !" 40 Volts !" IMD –30 dB !" Common Emitter !" Gold Metallization

M111

Abstract: MS1504 MS1510 6lfl
Contextual Info: MS1510 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Efficiency 55% !" Common Emitter !" POUT = 38 W Min.

2SD1146

Abstract: SD1146
Contextual Info: SD1146 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Efficiency 60% !" Common Emitter !" !"POUT = 10 W Min.

MS1504

Contextual Info: MS1504 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 160 MHz !" 13.6 Volts !" Common Emitter !" !"POUT = 30 W Min. !"GP = 10.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

SD1143

Abstract: 2sd1143 transistor sd1143
Contextual Info: SD1143 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 175 MHz !" 12.5 Volts !" Common Emitter !" !"POUT = 10 W Min. !"GP = 10 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

MS1402

Contextual Info: MS1402 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 450 - 512 MHz !" 12.5 Volts !" Efficiency 55% !" !"POUT = 2.0 W Min. !"GP = 10.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

MS1403

Contextual Info: MS1403 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 175 MHz !" 7.5 Volts !" Common Emitter !" !"POUT = 1.4 W Min. !"GP = 7.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

SD1429

Abstract: M111 2SD1429
Contextual Info: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

MSC1679

Abstract: MS2200
Contextual Info: MS2200 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Symbol VCBO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS TCASE = 25°C

MS1401

Contextual Info: MS1401 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 150 MHz !" 7.5 Volts !" Common Emitter !" !"POUT = 2.5 W Min. !"GP = 11.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

d 1879 TRANSISTOR

Abstract: transistor C 2240
Contextual Info: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE

MS2091

Contextual Info: MS2091 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Internal Input Matching Metal/Ceramic Hermetic Package POUT = 220 W Min. GP = 8.7 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

7212 transistor

Contextual Info: JM| mmm RF Products * Microsemi Prosœss ^cw efeö a y r&sftfttNttgy 140 Com m erce Drive Ntontgomeryville, PA 18936-1013 Tei: 215 631-9840 SD1 272-2 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTO R FREQUENCY 176MH2