MICROSEMI MOSFET 1000V Search Results

bare Die mosfet

Abstract: MM196 MSAFA1N100D UPF1N100 MSC1589
Contextual Info: MM196 6 MOSFET Multi-Chip Module SANTA ANA DIVISION PRELIMINARY SPECIFICATION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet

vienna rectifier

Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
Contextual Info: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac

Contextual Info: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1203 1000V, 12A, 30MHz MOSFET Driver Hybrid The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies D Features  G S  SiC Schottky Diode

Contextual Info: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

Contextual Info: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

Contextual Info: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies

Contextual Info: APTM100DA18CT1G VDSS = 1000V RDSon = 180m typ @ Tj = 25°C ID = 40A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 •   AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features

Contextual Info: APTM100SK33T1G VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 23A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application •  Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4  CR2 1 2    12 Power MOS 8 MOSFETs

Contextual Info: APTM100H45SCTG VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Features • Power MOS 7 MOSFETs

Contextual Info: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

ultrasound transducer high power driver

Abstract: DRF1200 SG 939 ultrasound transducer circuit driver DRF1201 DRF12XX
Contextual Info: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1203 1000V, 12A, 30MHz MOSFET Driver Hybrid The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

DRF1200

Abstract: pin diagram of MOSFET microsemi mosfet 1000V
Contextual Info: DRF1200 G 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Contextual Info: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

DRF1201

Abstract: DRF12XX mosfet drive circuit diagram
Contextual Info: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.