MICRON SEMICONDUCTOR Search Results
MICRON SEMICONDUCTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AM9513ADIB | Rochester Electronics LLC | AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| CA3130AT/B | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3140T | Rochester Electronics LLC | CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 |
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MICRON SEMICONDUCTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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micron sramContextual Info: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first |
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35-micron25-microncy7c1021ahe10+1 | |
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Contextual Info: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod uct family. Several arrays up to 700k cells cover all sys tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS |
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bout12 | |
dram structure
Abstract: 2240 6T SRAM micron sram
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infmp200206dram structure22406t sram+1 | |
MT29F32G08AFACA
Abstract: MT29F32G08 MT29F32G0
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48-pinmt29f32g08afacavvpmt29f32g08afacavi/pesmt29f32g08afaca+2 | |
MT29F32G08AFACAWP-IT
Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
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48-pinmt29f32g08afacawp-itcmt29f32g08afacawp-itesmt29f32g08afacawp-it+3 | |
XH018Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron |
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xh01818-micron | |
MT29F128G08AJAAAWP-ITES
Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
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128gb48-pinexterm113216411281256gb+8 | |
Infineon automotive semiconductor technology roadmap
Abstract: Infineon technology roadmap micron sram
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600mbit/sec/pininfmp200105infineon automotive semiconductor technology roadmapinfineon technology roadmap+1 | |
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Contextual Info: CD74LCX16646 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver December 1997 Description Features Advanced 0.6 micron CMOS Technology Harris Sem iconductor’s CD74LCX16646 is produced in an advanced 0.6 micron CMOS technology, achieving industry |
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cd74lcx1664616-bitmo-118-ab | |
2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
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62a002 bit magnitude comparatorncr asicncr microelectronics division+7 | |
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Contextual Info: CD74LCX16952 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver January 1998 Description Features • Advanced 0.6 micron CMOS Technology Harris’ CD74LCX16952 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed |
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cd74lcx1695216-bitmo-118-ab | |
memory 9652Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net |
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memory 9652 | |
rpp1k1Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate |
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xt01818-micronrpp1k1 | |
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Contextual Info: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance |
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cy7c340cy7c34x65-microncy7c34xb+5 | |
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sensores
Abstract: memoria
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sensoresmemoria | |
5Bp smd transistor data
Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
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5bp smd transistor data5bp smdtransistor smd 2x yck 158+6 | |
IDT ZBT SRAM 1994
Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
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idt zbt sram 1994samsung 10k filing secsemico2000f+6 | |
MCR 22-8 transistor power
Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
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mcr 22-8 transistor powertransistor motorola 41810146 1987carrier a022h+6 | |
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Contextual Info: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover |
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880nm905nm | |
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Contextual Info: CD74LCX16646 S E M I C O N D U C T O R Fast CMOS 3.3V 16-Bit Registered Transceiver December 1997 Features Description • Advanced 0.6 micron CMOS Technology Harris Semiconductor’s CD74LCX16646 is produced in an advanced 0.6 micron CMOS technology, achieving industry |
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cd74lcx1664616-bit1-800-4-harris | |
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Contextual Info: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and |
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gg07b0smt4c4256512-cycle175mw+2 | |
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Contextual Info: Proper Installation Procedures for Micron SODIMMs STEP 3 Micron Technology is one of the most efficient and innovative semiconductor companies in the world. Through our global operations in Asia, Europe, and North America, we manufacture and market a complete line of DRAM components and modules, Flash |
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World transistors and ic
Abstract: mixed signal fpga datasheet XC4000XV xilinx silicon device
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25-micronxc4000xvxc40125xv18-micron+3 | |
memory module
Abstract: STEP BY STEP MODULE
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memory modulestep by step module | |