MICRON POWER RESISTOR 220W Search Results

MDS-1212

Abstract: MICRON POWER RESISTOR MRC MICRON POWER RESISTOR 220w 01F2 MR22 mr08 RESISTOR 05ii MRC 433 660N MR22/24
Contextual Info: Micron Power Resistors MRP Large-Capacity Type Resistors With Aluminum Case Economy Type * Please refer to MDS-1212 for more detailed information. MRC MRS Part Numbering System 10 Generic name Resistor element External shape Standard Resistance 11 Tolerance

ac 1501-50

Abstract: MDS-70507 MY-60 MICRON POWER RESISTOR 220w
Contextual Info: Micron Power Resistors Type Resistors With Aluminum Diecast Case MYP Large-Capacity Please refer to MDS-70507 for more detailed information. * MYC MYS 1 Part Numbering System 2 3 4 5 6 7 M Y C 2 2 N Generic name Resistor element External shape Standard 8 9

mrc 444

Abstract: MICRON POWER RESISTOR MRC MDS-1212 MICRON POWER RESISTOR 220w MR22 35mm2
Contextual Info: Micron Power Resistors MRP Large-Capacity Type Resistors With Aluminum Case Economy Type ✳ Please refer to MDS-1212 for more detailed information. MRC MRS Part Numbering System 1 2 3 4 5 6 7 M R C 0 8 N Generic name Resistor element External shape Standard

equivalent of 662K

Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n
Contextual Info: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film

p 1703 bds

Contextual Info: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced

100uf HFK

Abstract: HFK CAPACITOR 100 HFK capacitor
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier

100 HFK

Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

transistor di 960

Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

a2324

Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

elna 50v

Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

7909 regulator

Abstract: PTFA092213ELV4
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

LM7805

Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

PTFA082201E

Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

PTFA092213EL

Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

Contextual Info: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output

cwe3

Contextual Info: SM364TCSMB3UI15 February 1997 Rev 0 SMART Modular Technologies SM364TCSMB3UI15 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSMB3UI15 is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for

100PF

Abstract: 8B10B ACS4110 ACS411CS ACS9020 AD1145
Contextual Info: GO I— I GO O O O "si- Acapella Optical Modem IC ACS411CS Main Features * Three chip set supporting full duplex serial transm ission over twin optical fiber, one fib er w ith WDM. * C onfigurable parallel m icroprocessor bus interface. * Up to 16 independent synchronous data channels.

10k resistor network SIP

Abstract: transistor SMD t04 10k resistor array SIP 10k resistor network SIP 9 pin 8-pin resistor 10k smd 103 rp bus r2r resistor ladder networks smd smd diode marking code T03 8 pin ic 4606 transistor SMD t04 51 ic resistor 331/471
Contextual Info: w w w . b o u r n s . c o m Resistor Networks I. Product Selection II. Popular Resistance III. Thick Film Products Through-hole Packages

88E1011S

Abstract: ADS8540 Marvell Ethernet PHY 88E1011S ATX POWER SUPPLY 400W circuit diagram 825v hg MPC840 LT1764 88e1011 DDR DIMM pinout micron 184 FCC2
Contextual Info: ADS Board Specification MPC8560/ADS8540/D Rev. 0.5.1, 6/2004 MPC8560/MPC8540 ADS Specification MPC8560/MPC8540 Power QUICC IIITM Integrated Communications Processor ADS Board Specification PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE Documentation History

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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