MICRON POWER RESISTOR Search Results

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

Contextual Info: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

ISO220 package

Abstract: MWT273HP MwT-273 ISO220
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

Contextual Info: ET MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in iim ►j 50 p • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: MwT-17 500 MHz-12 GHz High Linearity Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y |4- 7 5 ->| p 75 -+I • 1 W ATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

Contextual Info: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than

A&TB CI 11 AM

Abstract: LT 5251 CY7C132 CY7C136 CY7C146 B057r
Contextual Info: CYPRESS EbE SEMI CONDUCTOR D " F ^ - Z V asa^bbB 1 • CY7C132/CY7C136 CY7C142/CY7C146 I Z . CYPRESS_ SEMICONDUCTOR Features 0.8 micron CMOS for optimum speed/power Automatic power-down TTL-compatible Capable of withstanding greater than 2001V electrostatic discharge

transistor H6C

Abstract: CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01
Contextual Info: FUjlTSU M ay 1990 Edition 1.0 P R O D U C T P R O FILE CG10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-micron CMOS gate arrays is a highly integrated low-power, ultra high-speed product family that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-column gate structure and 2-layer

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

capacitor 106 35K

Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

Contextual Info: CD74FCT16952T, CD74FCT162952T, CD74FCT162H952T October 1997 Fast CMOS 16-Bit Registered Transceivers Ordering Information Features • Advanced 0.6 micron CMOS Technology • These Devices Are High-speed, Low Power Devices with High Current Drive PART NUMBER

465B

Abstract: AN1955 MRF5S19150 MRF5S19150R3 MRF5S19150SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S19150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150SR3

Contextual Info: CD74FCT16543T, CD74FCT162543T, CD74FCT162H543T January 1998 Features Fast CMOS 16-Bit Latched Transceivers Ordering Information • Advanced 0.6 micron CMOS Technology • These Devices Are High-speed, Low Power Devices with High Current Drive PART NUMBER

Contextual Info: PRELIMINARY CYPRESS CY7C133 CY7C143 2K x 16 Dual-Port Static RAM Features • Available in 68-pin PLCC • 0.8-micron CMOS for optimum speed/power • High speed access: 25 ns • Low operating power: I c e = 170 mA typ. • Automatic power-down • TTL compatible

Contextual Info: MICRON CONFIDENTIAL AND PROPRIETARY PRELIMINARY‡ ULTRA LOW POWER 1/7-IN CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR ULTRA LOW POWER 1/7 -IN CMOS ACTIVE-PIXEL CMOS IMAGE SENSOR MI-0133/MT9C033W00STC_ES FEATURES DESCRIPTION • Array Format: Active: 377H x 312V including optical

plessey capacitor

Abstract: AN132 DCS1800 DS3805 IS-54 NJ88C50
Contextual Info: NJ88C50 Dual Low Power Frequency Synthesiser DS3805 The NJ88C50 is a low power integrated circuit, designed as the heart of a fast locking PLL subsystem in a mobile radio application. It is manufactured on Mitel Semiconductor 1.4 micron double polysilicon CMOS process, which ensures that

AN132

Abstract: DCS1800 DS3805 IS-54 NJ88C50 SP8713 RCR-27
Contextual Info: NJ88C50 Dual Low Power Frequency Synthesiser DS3805 The NJ88C50 is a low power integrated circuit, designed as the heart of a fast locking PLL subsystem in a mobile radio application. It is manufactured on Mitel Semiconductor 1.4 micron double polysilicon CMOS process, which ensures that

transistor AN132

Abstract: HIGH SPEED FREQUENCY DIVIDER SP8715
Contextual Info: NJ88C50 Dual Low Power Frequency Synthesiser DS3805 The NJ88C50 is a low power integrated circuit, designed as the heart of a fast locking PLL subsystem in a mobile radio application. It is manufactured on Mitel Semiconductor 1.4 micron double polysilicon CMOS process, which ensures that

Contextual Info: CD74FCT16373T, CD74FCT162373T, CD74FCT162H373T February 1998 Features Fast CMOS 16-Bit Transparent Latches Ordering Information • Advanced 0.6 micron CMOS Technology • These Devices Are High-speed, Low Power Devices with High Current Drive PART NUM BER

Contextual Info: CD74FCT16501T, CD74FCT162501T, CD74FCT162H501T Fast CMOS 18-Bit Registered Transceivers Features Ordering Information • Advanced 0.6 micron CMOS Technology • These Devices are High-speed, Low Power Devices with High Current Drive PART NUM BER TEMP. RANGE