MICRON POWER RESISTOR Search Results

CMOS Process Family

Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
Contextual Info: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single

MwT-273

Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

02011-BRF-001-A

Abstract: M02011 TIA AGC application note
Contextual Info: 622Mbps Transimpedance Amplifier with AGC M02011 Low-power, high-sensitivity, 622Mbps transimpedance amplifier fabricated in sub-micron CMOS The M02011 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

TF-680

Abstract: L302 FV09 macros in embedded computing
Contextual Info: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

Contextual Info: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

transistor MWTA 06

Contextual Info: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -*| i«-75 -*| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

Contextual Info: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 900 MICRON GATE WIDTH • DIAMOND-UKE CARBON PASSIVATION

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

ISO220 package

Abstract: MWT273HP MwT-273 ISO220
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

K 1358 fet transistor

Abstract: DIE CHIP 51 FET
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y j 50->| 3? • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

Contextual Info: MwT-9 ËàkWiü 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r 1 67 +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES p it t iiiim

Contextual Info: ET MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in iim ►j 50 p • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Contextual Info: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi

micron fuse resistors

Abstract: meg05n thermal fuse incorporated cement resistor Cement Resistor MICRON POWER RESISTOR 02
Contextual Info: Micron Power Resistors MEG Thermal Fuse Incorporated Cement Resistors MES Since thermal fuses are incorporated, cement resistors respond quickly to overloading as well as external overheating. These resistors also provide outstanding features against surges. Therefore they

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: MwT-17 500 MHz-12 GHz High Linearity Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y |4- 7 5 ->| p 75 -+I • 1 W ATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

Contextual Info: MwT-A9 M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET tec h no lo g y ri p • • 'f +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Contextual Info: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than

A&TB CI 11 AM

Abstract: LT 5251 CY7C132 CY7C136 CY7C146 B057r
Contextual Info: CYPRESS EbE SEMI CONDUCTOR D " F ^ - Z V asa^bbB 1 • CY7C132/CY7C136 CY7C142/CY7C146 I Z . CYPRESS_ SEMICONDUCTOR Features 0.8 micron CMOS for optimum speed/power Automatic power-down TTL-compatible Capable of withstanding greater than 2001V electrostatic discharge

transistor H6C

Abstract: CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01
Contextual Info: FUjlTSU M ay 1990 Edition 1.0 P R O D U C T P R O FILE CG10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-micron CMOS gate arrays is a highly integrated low-power, ultra high-speed product family that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-column gate structure and 2-layer