MICRON PHM Search Results

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

XH035

Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target

CMOS spice model

Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

XH035

Contextual Info: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and

XH018

Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six

bsim3 0.18 micron parameters

Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

0.6 um cmos process

Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Transfer Hoses B1. Cable Ties Part Number PHM1 PHM2 PHM3 PHM4 PHS2 PHS3 B2. Cable Accessories B3. Stainless Steel Ties C1. Wiring Duct PHM3 C4. Cable Management PAT1M, PAT1.5M Length Ft. m 3.2 1 Part Description Transfers cable tie and signal from

SW-SPST footprint

Abstract: 470nF CQ31 SA1203I TQFP48 TSA1203 TSA1203IF TSA1203IFT SW-SPsT sfdr-i
Contextual Info: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER • Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V D1 D0 LSB VCCBE GNDBE 44 43 42 VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI index corner REFMI REFPI ■ ■ ■ ■ ■ ■ Independent supply for CMOS output stage

SW-SPST footprint

Abstract: idc32 CQ32 CQ612 RESISTOR FOOTPRINT 805 IDC 32 SW-SPsT C16 marking code SOT23-6
Contextual Info: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER • Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V D1 D0 LSB VCCBE GNDBE 44 43 42 VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI in dex corner REFMI REFPI ■ ■ ■ ■ ■ ■

CQ31

Abstract: TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF TQFP48 Fn001 31C SOT23-6
Contextual Info: IG N TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER S NOT FOR NEW DESIGN P 10-bit, dual-channel A/D converter in deep E D 33 D3 W 32 D4 IPOL 6 31 D5 E 29 D7 N 28 D8 AGND 10 27 D9 MSB INBQ 11 26 VCCBE 25 GNDBE AGND 12 13 14 15 16 23 24 GNDBI DVCC DGND

CQ11

Abstract: CQ31 SOT23-6 TQFP48 TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF
Contextual Info: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE GNDBE VCCBI VCCBI OEB 36 D0 LSB 35 D1 AGND 3 34 D2 INIB 4 33 D3 AGND 5 32 D4 IPOL 6 31 D5 TSA1005 AVCCB 7 30 D6 29 D7 AGND 8 28 D8 AGND 10 27 D9(MSB)

CQ31

Abstract: marking code c41 SMD ic SW-SPST footprint SA1203I TQFP48 TSA1201 TSA1203 TSA1203IF TSA1203IFT cq13
Contextual Info: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER PIN CONNECTIONS top view AVCC OEB CKD VCCBI GNDBE VCCBE D0(LSB) 41 40 39 38 37 D1 AVCC 42 36 D2 35 D3 3 34 D4 INBI 4 33 D5 A GND 5 32 D6 IPOL 6 31 D7 AVCC 7 30 D8 29 D9 INQ 9 28 D10 A GND 10 27 D11(MS B )

rs7 smd

Contextual Info: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE 44 43 42 GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■ index corner REFMI ■ ■ REFPI ■ PIN CONNECTIONS top view submicron CMOS technology

CQ31

Abstract: TQFP48 TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF ultrasound transducer transformer
Contextual Info: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE GNDBE VCCBI VCCBI OEB 36 D0 LSB 35 D1 AGND 3 34 D2 INIB 4 33 D3 AGND 5 32 D4 IPOL 6 31 D5 TSA1005 AVCCB 7 30 D6 29 D7 AGND 8 28 D8 AGND 10 27 D9(MSB)

E11213

Abstract: sa1005
Contextual Info: TSA1005-20 DUAL-CHANNEL, 10-BIT, 20MSPS, 100mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep NC 41 40 39 NC 44 43 42 VCCBE GNDBE VCCBI VCCBI OEB AVCC 47 46 45 AVCC 48 INCMI ■ ■ ■ ■ REFMI ■ ■ index c orner REFPI ■

CQ31

Abstract: Polar 585 schematic 470nF STG719 TQFP48 TSA1005 TSA1005-40IF TSA1005-40IFT idc32 IDC 32
Contextual Info: TSA1005-40 DUAL-CHANNEL, 10-BIT, 40MSPS, 150mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep PIN CONNECTIONS top view submicron CMOS technology NC NC VCCBE GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■

SW-SPST 3

Abstract: om SMD CODE MARKING sa1005 c.d.m. technology c53 HP8644 Polar 585 schematic MICRON phm
Contextual Info: TSA1005-40 DUAL-CHANNEL, 10-BIT, 40MSPS, 150mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep NC NC VCCBE 44 43 42 GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■ index corner REFMI ■ ■ REFPI ■ PIN CONNECTIONS top view

2 pin connector sip2

Abstract: Fn001 CI11 SOT23-6 ultrasound transducer circuit oscillator ultrasound transducer transformer medical ultrasound "application note" s4_ SOT23-6 ultrasound transducer 10MHz TQFP48
Contextual Info: IG N TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER S NOT FOR NEW DESIGN P 10-bit, dual-channel A/D converter in deep E D W 32 D4 IPOL 6 31 D5 E N 13 28 D8 27 D9 MSB 26 VCCBE 25 GNDBE 23 24 GNDBI DGND SELECT P e let CLK R 17 18 19 20 21 22 DGND O 14 15 16