MICRON 63 Search Results

dram structure

Abstract: 2240 6T SRAM micron sram
Contextual Info: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they

Contextual Info: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

MwT-273

Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

F4029

Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

nd02d2

Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design

Infineon automotive semiconductor technology roadmap

Abstract: Infineon technology roadmap micron sram
Contextual Info: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that

dram 88 pin

Contextual Info: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T

Contextual Info: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

Contextual Info: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TECHNOLOGY, INC. M T 4L S D T 1632U D SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

4LC4M

Contextual Info: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES

PT6042

Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Contextual Info: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS

Contextual Info: 4’ 8 M EGx64 MICRON I n 'm m n'zSE£ NONBUFFERED DRAM DIMMs D RAM MT4LDT464A X , MT8LDT864A (X) _ _ _ I WI f j | j I I I 1* 1 V y W •— ■— For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/

Contextual Info: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html

Contextual Info: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks M T46V4M 16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html

pic 8259

Abstract: sus_stat_n rtc backup battery circuit 2h48
Contextual Info: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two

Contextual Info: 4’8 MEGx32 MICRON* I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View

Contextual Info: MICRON 8’16’ 32 M EGx72 I BUFFERED DRAM DIMMs n o AM LJ 11 M lV I MT9LD T 872(F) X, MT18LD(T)1672(F) X, MT36LD(T)3272(C)(F) X H n •■■ Itfl C j | J I I I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

Contextual Info: L S I De | 5 3 0 4 3 0 4 L OGI C CORP 01 000004^ S : T-46-13-47 LSA2011 Two Micron HCMOS Structured A rray LSI LO G IC C O R P O R A T IO N G en eral Description The LSA2011 is a member of the 2-micron drawn, 1.4-micron effective HCMOS family of Structured

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

MwT-273

Contextual Info: MwT-2 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES 50 50 • 9 dB SMALL SIGNAL GAIN AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH • CHOICE OF CHIP AND THREE PACKAGE TYPES