MHZ RF AMPLIFIER MODULE Search Results

AM020331SF-2D

Abstract: mhz rf amplifier module class a power amplifier
Contextual Info: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier

S-AV10L

Abstract: "RF Power Amplifier" "RF Power" 5-53P S-AV10H S-AV10
Contextual Info: S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module Unit: mm • High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% • S-AV10L 135~155 MHz • S-AV10H 150~175 MHz Maximum Ratings Tc = 25°C Characteristics Symbol

MSMV01

Abstract: module
Contextual Info: polyfet rf devices MSMV01 RF Power Module Power = 100.0 Watts Bandwidth = 225 to 1000 Mhz Gain = 16.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSMV01 is a 100 Watt, single stage amplifier module covering a bandwidth of 225-1000 Mhz. This compact module design

Contextual Info: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MLCQ02

Abstract: module
Contextual Info: polyfet rf devices MLCQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ02 is a 40 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

Contextual Info: P250-1215 250 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P250-1215 is a 250 Watt 960-1215 MHz Pallet Amplifier Features: • 250 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (16 Watts Input Power)  LDMOS Technology  36V operation

Contextual Info: P200-1215 100 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P200-1215 is a 200 Watt 960-1215 MHz pallet Amplifier Features: • 200 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (15 Watts Input Power)  LDMOS Technology  36V operation

MSCQ01

Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
Contextual Info: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

MHCV01

Abstract: module
Contextual Info: polyfet rf devices MHCV01 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 20 to 1000 Mhz Gain = 30.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MHCV01 is a 10 Watt, high gain amplifier module covering a bandwidth of 20-1000 Mhz. This compact module design is

Contextual Info: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MSCQ02

Abstract: module
Contextual Info: polyfet rf devices MSCQ02 RF Power Module Power = 150.0 Watts Bandwidth = 30 to 512 Mhz Gain = 17.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSCQ02 is a 150 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

Contextual Info: P100-1215 100 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P100-1215 is a 100 Watt 960-1215 MHz pallet Amplifier Features: • 100 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (10 Watts Input Power)  LDMOS Technology  24-36V operation

MBDQ01

Abstract: module
Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MLCQ03

Abstract: module
Contextual Info: polyfet rf devices MLCQ03 Power RF Amplifiers Power = 60.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ03 is a 60 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ02 is a 40 Watt, single stage amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

rf amplifier 100w

Contextual Info: polyfet rf devices MKAL01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 2 to 100 Mhz Gain = 50.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MKAL01 is a 100 Watt, high gain amplifier module covering a bandwidth of 2-100 Mhz. This compact module design is

Contextual Info: SLNA-010-40-08-SMA DATA SHEET 0.8 dB NF Low Noise Amplifier Operating From 10 MHz to 1,000 MHz with 40 dB Gain, 18 dBm P1dB and SMA SLNA-010-40-08-SMA is a wideband low noise RF coaxial power amplifier operating in the 10 MHz to 1 GHz frequency range. The amplifier offers 0.8 dB noise

Contextual Info: Thai HEWLETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier Module 10 to 200 MHz Technical Data UTO/UTC/PPA 211 Series Features Description • Frequency Range: 10 to 200 MHz The 211 Series is a thin-film bipolar, medium-gain, low-noise, RF amplifier suitable for front end

MCDK21

Abstract: f88m
Contextual Info: polyfet rf devices MCDK21 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 30 to Gain = 25.0 dB 88 Mhz Vdd = 12.0 Volts 50 ohms Input/Output Impedance Description The MCDK21 is a 10 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-88 Mhz. This compact module design is

MADK21

Abstract: module
Contextual Info: polyfet rf devices MADK21 Power RF Amplifiers Power = 5.0 Watts Bandwidth = 30 to Gain = 25.0 dB 88 Mhz Vdd = 12.5 Volts 50 ohms Input/Output Impedance Description The MADK21 is a 5 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-88 Mhz. This compact module design is

MCCL01

Abstract: module
Contextual Info: polyfet rf devices MCCL01 Power RF Amplifiers Power = 5.0 Watts Bandwidth = 20 to 100 Mhz Gain = 27.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MCCL01 is a 5 Watt, 2 stage high gain amplifier module covering a bandwidth of 20-100 Mhz. The operating temperature range

MCCQ03

Abstract: module
Contextual Info: polyfet rf devices MCCQ03 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 20 to 520 Mhz Gain = 27.0 dB Vdd = 25.0 Volts 50 ohms Input/Output Impedance Description The MCCQ03 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 20-520 Mhz. The operating temperature range