MGP14NG0E Search Results
MGP14NG0E Datasheets Context Search
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is |
OCR Scan |
TCJ-220 MGP14NG0E |