MGFC39V7785 Search Results

MGFC39V7785 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC39V7785		Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	53.99KB	1
MGFC39V7785		Unknown	FET Data Book	Scan	PDF	80.41KB	2
MGFC39V7785A		Mitsubishi	7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET	Original	PDF	184.74KB	2
MGFC39V7785A		Mitsubishi	7.7-8.5 GHz Band 8W Internally Matched GaAs FET	Scan	PDF	98.13KB	2

MGFC39V7785 Price and Stock

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Mitsubishi Electric


Mitsubishi Electric MGFC39V7785A-56
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MGFC39V7785 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFC39V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A 28dBm 10MHz	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5	OCR Scan	MGFC39V7785 27C102P, RV-15	PDF
mgfc39v7785 Abstract: MGFC39V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.	Original	MGFC39V7785A MGFC39V7785A 28dBm 10MHz June/2004 mgfc39v7785	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A -45dBc 28dBm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A -45dBc 28dBm	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4404A Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045 Contextual Info: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D	OCR Scan	MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF
I8155 Abstract: MGFC39V4450-51 MGFC39V7177-01 Contextual Info: ^M ITSUBISHI MGFC39VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC39VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50Q • High output power	OCR Scan	MGFC39VXXXX MGFC39VXXXX MGFC39V5258-01 MGFC39V5258-51 MGFC39V5964-01 MGFC39V5964-51 MGFC39V6471-01 MGFC39V6471-51 MGFC39V7177-01 MGFC39V7177-51 I8155 MGFC39V4450-51	PDF
39V77 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	39V77	PDF