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    MGF0909A APPLICATION Search Results

    MGF0909A APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PEF24628EV1X
    Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF Buy
    143-4142-11H
    Amphenol Communications Solutions Paladin RPO, DC, 4-Pair, 4 Column, APP PDF
    143-6262-11H
    Amphenol Communications Solutions Paladin RPO, DC, 6-Pair, 6 Column, APP PDF
    144-411D-11H
    Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 10 Column, 1.5mm Wipe, APP PDF
    144-411G-21H
    Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 16 Column, 2.25mm Wipe, APP PDF

    MGF0909A APPLICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGF0909

    Abstract: MGF0909a J10-0025
    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 • High output power P1dB=38dBm TYP.


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    mgf0909a38dbm20dbmmgf0909+1j10-0025 PDF

    MGF0909A

    Abstract: MGF0909a application
    Contextual Info: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3


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    mgf0909amgf0909a application PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)


    OCR Scan
    mgf0909a38dbm20dbm PDF

    MGF0909A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power


    Original
    mgf0909ajune/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power PidB=38dBm(TYP.)


    OCR Scan
    mgf0909a38dbm20dbm PDF

    Contextual Info: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN 4.4+0/-0.3


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    mgf0909a PDF

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


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    h-cr587-jki-0612mgfs45h2201gmgfs40h2201g+8mgf0909asiriomgfc36v-aqvc12mgf1907amgf4961mgf4941almitsubishi mgf PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


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    h-cx587-rki-1311mgf4937mgfg5h1503+8mgf4937amgd-32mgfg5h1502mgf0904mgfc39v5964mgf2430mgf0909aba012j1 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF