MG50Q2YS40 EQUIVALENT Search Results

MG50Q2YS40

Contextual Info: TOSHIBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • • • • High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5^8 (Max.) Low Saturation Voltage

Contextual Info: TO SHIBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.)

MG50Q2YS40

Abstract: MG50Q2YS40 equivalent
Contextual Info: MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Motor Control Applications. Unit in mm • High input impedance · High speed: tf = 0.5µs max. trr = 0.5µs (max.) · Low saturation voltage : VCE(sat) = 4.0V (max.)

Contextual Info: T O SH IB A MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.)

MG50Q2YS40

Contextual Info: TO SH IBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 3 -M 5 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5^8 (Max.) Low Saturation Voltage

MG50Q2YS40

Abstract: VQE 12 61jl
Contextual Info: TOSHIBA MG50Q2YS40 MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -FAST-ON-TAB # 1 1 0 2 - 0 5 .6 1 0 . 3 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

Contextual Info: T O SH IB A MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mß>;nn?Y^in Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage • S SI Cl 2 3 ± 0.5 2 3 ± 0.5

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228