MG100G1AL3 5 Search Results

MG100G1AL3

Abstract: mg100g1al MG100G1AL3 5 mg100g1 MG100G1AL3-5 GTR
Contextual Info: MG100G1AL3 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hjrj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)

MG100G1AL3

Abstract: MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g
Contextual Info: MG100G1AL3 — SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current: Gain : hpj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: MG100G1AL3 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)100

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG15G1AL3

Abstract: MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1
Contextual Info: - 212 n p n . y - ' o Y - 7 l) - + - í ; U ' 5 f ' f ^ - * £ ¿ & R y - X « j & 't t t * á F f t T l, '. 6 ° iiá f t S d ít t i- ^ íá g i f ifi« ) > y 'J > h > * h 7 > y ^ ? l B U f fi^ íg K ft A L-1 r otu± h BK- 1 B L -I C c) x " r- 1 t B

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,