MG-250 TRANSFORMER Search Results

Contextual Info: Document 512 SMT Gate Driver Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

DA2319-AL

Abstract: DA2320-ALC hp 4192 DA2320
Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

low Pressure Sodium Lamps circuit

Abstract: high Pressure mercury vapour Lamps circuit HGR15 NA34 GR101 Pb-RE-11 EEFL C9H13N fumarate induction lamp
Contextual Info: GR101-03I General Specification on Chemical Substances Ver.10.0 1. Objective NTT Electronics Corp. hereafter, NEL has established the”General Specifications on Chemical Substances” to clearly specify the requirements and to ensure the control of chemical substances specifications contained

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

EE ferrite core

Abstract: rod core ferrite ferrite rod cores core EE 20
Contextual Info: FERRITE C O R ES* These cores are designed for wire-winding. • ■ ■ ■ ■ ■ APPLICATIONS ■ ■ ■ Switching power supplies Choke coils Current transformers UA Core: U A 4 5 -U A 4 7 U-shaped Cores Pot Cores Multi-Hole Cores Rod Cores Drum Shaped Cores

DA2320

Abstract: DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

zinc chloride

Abstract: DIDP 10th class 2012 fumarate induction lamp JIG-101 HCB CONNECTORS low Pressure Sodium Lamps circuit high Pressure Sodium Lamps circuit selen
Contextual Info: GR101-02I General Standard on Chemical Substances Management For suppliers Version.10.0 (November 26, 2010 Established) NTT Electronics Corporation Procurement Management Center Environmental and Quality Management Division GR101-02I Index 1. Introduction.

Contextual Info: Document 512 SMT Gate Drive Transformers •฀ Designed฀ for฀ high฀ switching฀ speed,฀ transformer฀ coupled฀ MOSFET and IGBT gate drive circuits. •฀ Operating฀frequency:฀50฀kHz฀–฀2฀MHz •฀ ฀

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

702 H

Abstract: J993 EPA045-X bawa
Contextual Info: _Starlan Isolation Transformers EpA045-X ELEGTnONICSi INC. • Designed for Hub and Node Applications ■ Hipot 2000 Ynris ■ ■ ■ M eets the high-Reliability Specs of IEEE S02.3 Standard Type 1 Ease 5 ■ ■ Available in Single and Dual Low Profile Packages

Contextual Info: GATE DRIVE TRANSFORMERS Outgassing Compliant Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and

PFD3215

Abstract: pfd3215 wideband
Contextual Info: Document 982W-1 Wideband Transformers – PFD3215 • Typical applications are as impedance or isolation transformer • Can be used for balanced to unbalanced balun conversion • 1/4 Watt input RF power rating • Low DCR values Insertion DCR Bandwidth

ML-1 94V-0

Abstract: E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference
Contextual Info: Why MG Chemicals? At MG Chemicals, we realize that our number one asset is you, our customer. ISO Quality Standards. Since 1955, M.G. Chemicals has provided the North American electronics industry with a full line of high performance chemicals and accessories. The M.G. Chemicals manufacturing facility operates

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSGYE234D1 FSGYE234R3 FSGYE234R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYE234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

FSGJ264R3 equivalent

Abstract: 1E14 2E12 FSGJ264D1 FSGJ264R FSGJ264R3 FSGJ264R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGJ264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSGS234D1 FSGS234R FSGS234R3 FSGS234R4 1E14 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGS234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

1E14

Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the