MF MOSFET Search Results

MC44603P

Abstract: advantages of 1N4007 flyback smps diode 1N4733 1N4007 smps diode mc44603p or smps MC44603P smps 220 6 TL431 application note MOSFET 1 KW
Contextual Info: AND3001/D Power Supply Application 110 W Output Flyback SMPS http://onsemi.com APPLICATION NOTE C3 1 nF / 1 KV 180 VAC TO 280 VAC R1 1W/5W RFI FILTER C4–C7 1 nF / 1000 V R3 4.7 kW C1 100 mF D1–D4 1N4007 D5 1N4934 C2 220 mF R2 68 kW / 2 W 9 C10 820 pF 1 mF

kic6981

Contextual Info: SEMICONDUCTOR KIC6981F/MF TECHNICAL DATA 1.5A 1-Channel Current Limited Power Switch Description The KIC6981F/MF is integrated power switches optimized for USB and other hot-swap applications. The family of devices complies with USB 2.0 and is available with high

Contextual Info: SEMICONDUCTOR KIC6981F/MF TECHNICAL DATA 1.5A 1-Channel Current Limited Power Switch Description The KIC6981F/MF is integrated power switches optimized for USB and other hot-swap applications. The family of devices complies with USB 2.0 and is available with high

Contextual Info: SEMICONDUCTOR KIC6982F/MF TECHNICAL DATA 1.5A 1-Channel Current Limited Power Switch Description The KIC6982F/MF is integrated power switches optimized for USB and other hot-swap applications. The family of devices complies with USB 2.0 and is available with high

FLP-8

Abstract: mf 2013
Contextual Info: SEMICONDUCTOR KIC6971F/MF TECHNICAL DATA Analog CMOS Integrated Circuits 1.5A 2-Channel Current Limited Power Switch The KIC6971F/MF is integrated power switches optimized for USB and other hot-swap applications. The family of devices complies with USB 2.0 and is available with high

MPS4050

Abstract: MPS2100-8 MPD4050-8 MPS4050-8 mps3060-9 MFD4050-8 mps3060 MPS3060-8 hall s41 MFS3060-2
Contextual Info: A ST EC STANDARD POWER 4b E J> WM 1D 13IE2 D0D0b2fl 7b7 MF/MP Series 5 to 7.5 Watts Single/Dual Outputs DC/DC Converters IPMR <xxz/> ASTEC " T 5 7 -1 1 The MF/MP Series is ideally suited for sensitive analog and digital applications requiring low noise, i.e. telecommunications,

Contextual Info: s HiPerFET Power MOSFET IXFH50N20S VDSS ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr tr r = 200 V = 50 A = 45 mfì < 200 ns Preliminary data Sym bol Maximum R atings Test C onditions v DSS Tj = 25°C to 175°C

Contextual Info: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol

Contextual Info: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100

Contextual Info: Mf i SS MS S QOmSbQ bOS * I N R PD-9.569A International 5M1 Rectifier_ IR C 644 HEXFET P o w e r M O S F E T • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching

Contextual Info: POlilEREX INC y C W 3^E E R E T> 7STMb21 G G D H S Mf ñ IPRX JEF225A1 JEF230Â1 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (4 3 )4 1 .14 .1 4 Six-Mos FETMOD

DC-DC Products

Abstract: IN4148 SOD323 MA2J11300L DPA422 9W LED Driver DPA423 DPA426 MMST3904 Pi transformer design tech TO-263-7C
Contextual Info: Innovation in power conversion C4 1000 pF R7 1500 V 10 k L1 10 MH 1A PoE Interface Product Selector Guide VR31 DC-DC ProductsR36 R31 24.9 k7 1% R32 100 k7 11 V MMBTAO6L Q32 51 k7 LMV431A1M Q33 U31 1% R34 69.8 7 1% 2 6,7 4 3 C2 1.5 MF 100 V DPA-Switch 1 MMST3904 MMBTAO6L

76N07

Contextual Info: H iP e r F E T Pow er M O S FE Ts ix f h 76N07-h IXFH 76N07-12 p vV DSS ^D25 70 V 70 V 76 A 76 A DS on 11 mfì 12 m il N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions Maximum Ratings vTDSS

Contextual Info: VX-l5/U-% /17-MOSFET VX-n SERIES POWER MOSFET N - f - * * Jk i > / > his O U T L IN E D IM E N S IO N S 2SK2198 F 3 0 Z 5 0 V X 2 500V 30a • Mfàm R A TIN G S Absolute Maximum R atings m Item ie g (T c=25°C ) # S to ra g e T e m p e ra tu re f • v i'J l'S

capacitor 1000 MF 25v

Abstract: 4.7 MF 50v CAPACITOR TMK316BJ105KL ceramic capacitor 1uf 600v electrolytic capacitor 1uF 600v ceramic capacitor 4.7 mf 50v T1 2A 250V 1uF 250V 0805 capacitor 30 mf of 1000 mf capacitor
Contextual Info: MAX1856 15VIN to -200Vout @0.03A Table 1: BILL OF MATERIALS DESIGNATION C1 QTY 1 C3,C4 2 C6 2 C8 C9 1 1 C10,C13 2 C11 1 C12 1 D2 1 D1, D3 N1 2 1 R2 R3 R4 R5 R6 1 1 1 1 1 R7 R8 R9 R10 R11 R12 T1 JU1 U1 1 1 1 1 1 1 1 1 1 DESCRIPTION 100 mF 250V electrolytic capacitor

power mosfet j 162

Abstract: mosfet j 162
Contextual Info: Contents Page General Information for Chips J-2 IGBT Chips v _ V“ G-Series, Low VCE Mf type G-Series, High Speed type 6 0 0 - 1200 V 6 0 0 - 1200 V 1 0 - 60 A 1 0 -1 0 0 A 1 .8 -3 .5 V 2 .5 -4 .0 V J-3 S-Series, Low type S-Series, High Speed type 6 0 0 - 1200 V

m104 mosfet

Abstract: AND8174 1N4148 BAS16LT1 C101 NIS110N02 NIS6111 NIS6201 NTD011N02 NTD110N02
Contextual Info: AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor http://onsemi.com APPLICATION NOTE General Description NIS6111 Simplified Block Diagram The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low RDS on power MOSFET,

capacitor 820 MF 4v

Abstract: VC-5810 HIP6301 2N7002 Si4768CY Si4770CY SiDB766702 MOSFET C65 CRCW0805000ZRT1
Contextual Info: SiDB766702 Vishay Siliconix LITTLE FOOTr Plus MOSFET and Driver In SO-16, 4-Phase Evaluation Board FEATURES D D D D D D RLOAD MOSFET Plus Driver SO-16 Product Demonstration 0-V to 30-V Input Voltage—Depending On Device 4.5-V to 5.5-V Input Voltage for Driver Voltage

schematic diagram for phoenix power system

Abstract: ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY AND8189 1N4148 BAS16LT1 NCP1403 NIS110N02 NIS6111 NIS6201 NTD011N02
Contextual Info: AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor http://onsemi.com APPLICATION NOTE General Description NIS6111 Simplified Block Diagram The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low RDS on power MOSFET,

MGSF1N03T1

Abstract: MBR0530LT1 ECJ5YB1H335M ECJ2FB0J106M
Contextual Info: NCP1406 25 V/25 mA PFM Step- Up DC- DC Converter The NCP1406 is a monolithic PFM step- up DC- DC converter. This device is designed to boost single Lithium or two cells AA/AAA battery voltage up to 25 V with internal MOSFET output for handheld applications. A pullup Chip Enable feature is built- in with

MBR0530LT1

Abstract: UNDERVOLTAGE SENSING CIRCUIT tsop5 CLS4D14-100 CE CAPACITOR PANASONIC ECJ3YB1C106M panasonic ccd dsp MBR0520LT1 NCP1406 NCP1406SNT1 NCP1406SNT1G
Contextual Info: NCP1406 25 V/25 mA PFM Step−Up DC−DC Converter The NCP1406 is a monolithic PFM step−up DC−DC converter. This device is designed to boost single Lithium or two cells AA/AAA battery voltage up to 25 V with internal MOSFET output for handheld applications. A pullup Chip Enable feature is built−in with

Contextual Info: NCP1403 15 V/50 mA PFM Step- Up DC- DC Converter The NCP1403 is a monolithic PFM step- up DC- DC converter. This device is designed to boost a single Lithium or two cell AA/AAA battery voltage up to 15 V with internal MOSFET output for handheld applications. A pullup Chip Enable feature is built with

A114

Abstract: A115 JESD22 JESD78 NCP1550 NCP1550SN18T1 NCP1550SN19T1 NCP1550SN25T1 NCP1550SN27T1
Contextual Info: NCP1550 600 kHz PWM/PFM Step-Down DC-DC Controller The NCP1550 is a monolithic micropower high frequency voltage mode step–down controller IC, specially designed for battery operated hand–held electronic products. With appropriate external P–type MOSFET, the device can provide up to 2.0 A loading

Contextual Info: NCP1403 15 V/30 mA PFM Step-Up DC-DC Converter The NCP1403 is a monolithic PFM step–up DC–DC converter. This device is designed to boost a single Lithium or two cell AA/AAA battery voltage up to 15 V with internal MOSFET output for handheld applications. A pull–up Chip Enable feature is built