METAL OXIDE SEMICONDUCTOR Search Results

atm lu 738

Contextual Info: UltraMOV Series Semiconductor August 1998 High Energy Radial Lead Metal Oxide Varistors The UltraMOV Series of Metal Oxide Varistors is designed for applications requiring high peak surge current ratings and high energy absorption capability. UltraMOVs are primarily

20e221

Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Contextual Info: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING

B72214S511K101

Abstract: GNR14D471K varistor s20k B722 p S10k 25 varistor B72207S300K101 B72207-S300-K101 B72207S271K101 b72214s321k101 B72210S251K101
Contextual Info: EMC, FILTERS & SUPPRESSION METAL OXIDE VARISTORS CERAMATE type GNR A comprehensive range of voltage dependent, metal oxide semiconductor devices varistors designed to protect equipment against transient voltage spikes. Connected directly across the supply rails, they offer a convenient and simple solution to transient suppression.

ha32

Contextual Info: HA Series Semiconductor January 1998 Industrial High Energy Metal-Oxide Varistors Features Description • Recognized as “Transient Voltage Surge Suppressors”, UL File #E75961 to Std. 1449 HA Series transient surge suppressors are industrial high energy metal-oxide varistors MOVs . They are designed to

Contextual Info: METAL OXIDE VARISTOR SERIES"D" ZENAMIC ZENAMIC is the product name of a metal oxide varistor. ZENAMIC Transient / Surge Absorber, Series D is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing process,

V575HE550

Abstract: V250HE250 varistor 472 ns b V420HE400 varistor 472 N V275LA15A TNR12G471K marcon 15G820K V480HE450
Contextual Info: HARCON AMERICA CORP 5733311 0001124 5 « M A R 34E D MARCCN AMERICA CORP. METAL OXIDE VARISTORS TNR TNR is a metal oxide varistor having steep non-linear V-I characteristics and high discharge current capability. Marcon “TNR" characteristics • TN R Features

Contextual Info: EzLaze3 LASER CUTTING SYSTEM FOR SEMICONDUCTOR FAILURE ANALYSIS AND LCD REPAIR Applications • Cutting Metal Traces • Removing passivation, oxide and metal layers • Removing ITO shorts Features • Air-cooled architecture - No cooling water - Compact, Lightweight

IC 7555 datasheet

Abstract: 7555 ic
Contextual Info: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to

Contextual Info: Section 4: Technical Summary and Application Guidelines INTRODUCTION Tantalum capacitors are manufactured from a powder of pure tantalum metal. OxiCap - niobium oxide capacitor is made from niobium oxide NbO powder. The typical particle size is between 2 and 10 m.

Ta2O5 phase diagram

Abstract: Effects of over-heating in failed tantalum capacitors no3 smd TAJD336M006 TAJD336M016 TAJD476M010
Contextual Info: Section 5: Technical Summary and Application Guidelines INTRODUCTION Tantalum capacitors are manufactured from a powder of pure tantalum metal. OxiCap - niobium oxide capacitor is made from niobium oxide NbO powder. The typical particle size is between 2 and 10 m.

no3 smd

Abstract: TAJD336M006 TAJD336M016 TAJD476M010 WAVE Soldering guidelines ELECTROLYTIC Effects of over-heating in failed tantalum capacitors
Contextual Info: Section 5: Technical Summary and Application Guidelines INTRODUCTION Tantalum capacitors are manufactured from a powder of pure tantalum metal. OxiCap - niobium oxide capacitor is made from niobium oxide NbO powder. The typical particle size is between 2 and 10 m.

Ta2O5 phase diagram

Abstract: CECC 30801 no3 smd smd bridges dioxides TAJD336M006 TAJD336M016 TAJD476M010 tcj 103
Contextual Info: Section 5: Technical Summary and Application Guidelines INTRODUCTION Tantalum capacitors are manufactured from a powder of pure tantalum metal. OxiCap - niobium oxide capacitor is made from niobium oxide NbO powder. The typical particle size is between 2 and 10 µm.

Contextual Info: V i s hay I n t e r t e ch n o l o g y, I n c . AND TEC I INNOVAT O L OGY CA, CP, CPCC, CPCF, CPR High Volume N HN Wirewound/Metal Oxide Resistors O 19 62-2012 Resistors - High Power, Low Cost High Volume, Low-Cost, Axial Leaded, Wirewound/Metal Oxide, Commercial Power Resistors

RECTIFIER DIODES Motorola

Abstract: 2BL4 MBRS240LT3
Contextual Info: MOTOROLA Order this document by MBRS240LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS240LT3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal

RECTIFIER DIODES Motorola

Abstract: MBRS240LT3 2BL4 schottky rectifier motorola
Contextual Info: MOTOROLA Order this document by MBRS240LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS240LT3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal

24-C

Contextual Info: MOTOROLA Order this document by MBRS140LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS140LT3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal

Contextual Info: MOTOROLA Order this document by MBRS1540T3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS1540T3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal

Contextual Info: www.BT2000.co.uk +44 0 118 9324600 INNOVATIVE ELECTRONIC SOLUTIONS Fukushima Futaba Electric Co Ltd Futaba, Futaba, based in Fukushima, Fukushima, Japan, was established in 1964 as a Metal Oxide Oxide Film Resistor manufacturer. They have now expanded into the production of ceramic substrates

B4l1

Abstract: SMC case 403
Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 marking b12 rectifier diode B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B13 diode SCHOTTKY

Abstract: diode marking b13 Marking B13 MBRS130T3 schottky B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B36

Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B13 diode SCHOTTKY

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay